Applied Physics A

, Volume 60, Issue 5, pp 523–524

Note on the interpretation of injection-level-dependent surface recombination velocities

Authors

  • R. Brendel
    • Max-Planck-Institut für Festkörperforschung
Rapid Communications

DOI: 10.1007/BF01538780

Cite this article as:
Brendel, R. Appl. Phys. A (1995) 60: 523. doi:10.1007/BF01538780

Abstract

The surface recombination velocityS=U/n is defined as the ratio between the surface recombination current densityU and the excess minority carrier concentrationn at the semiconductor surface. Measurements of injection-dependent surface recombination velocities apply modulation techniques, and thus, in reality, a differential surface recombination velocitySdiff=dU/dn is determined. The significance to distinguishS andSdiff when evaluating measurements is shown.

PACS

73.40

Copyright information

© Springer-Verlag 1995