International Journal of Thermophysics

, Volume 13, Issue 6, pp 1061–1084

Thermophysical properties data on molten semiconductors

  • S. Nakamura
  • T. Hibiya
Article

DOI: 10.1007/BF01141216

Cite this article as:
Nakamura, S. & Hibiya, T. Int J Thermophys (1992) 13: 1061. doi:10.1007/BF01141216

Abstract

Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSb, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly.

Key words

densityGaAsGaSbGehigh temperatureInPInSbmolten statesemiconductorsSisurface tensionthermal conductivityviscosity

Nomenclature

ρ

Density

Cp

Specific heat

ν

Kinematic viscosity

μ

Dynamic viscosityμ=νρ

κ

Thermal diffusivity

λ

Thermal conductivityλ=κCpρ

β

Volumetric thermal expansion coefficient

γ

Surface tension

dγ/dT

Temperature coefficient of surface tension

g

Gravitational acceleration

T

Temperature

ΔT

Temperature difference

L

Characteristic dimension

Copyright information

© Plenum Publishing Corporation 1992

Authors and Affiliations

  • S. Nakamura
    • 1
  • T. Hibiya
    • 1
  1. 1.Fundamental Research LaboratoriesNEC CorporationIbarakiJapan