Journal of Materials Science

, Volume 22, Issue 5, pp 1557–1562

The growth of diamond in microwave plasma under low pressure

  • Y. Mitsuda
  • Y. Kojima
  • T. Yoshida
  • K. Akashi
Papers

DOI: 10.1007/BF01132374

Cite this article as:
Mitsuda, Y., Kojima, Y., Yoshida, T. et al. J Mater Sci (1987) 22: 1557. doi:10.1007/BF01132374
  • 232 Downloads

Abstract

The synthesis of diamond particles in a low pressure plasma has been studied, with emphasis on the investigation of the substrate effect and the plasma conditions. It was found that a special pre-treatment of silicon substrate made it possible to form dense films, and a thickness of about 15μm could be reached by 20 h discharge. Unfortunately, however, the prepared films had poor adhesion. Observations by scanning electron microscope (SEM) showed that the poor adhesion was due to the fact that the film consisted of large particles with a diameter of about 10μm, and each particle had contacted to the substrate only by a point, not by a face. In addition, the plasma diagnostics of optical and ultraviolet emission spectroscopy (OES, 200–750 nm) revealed that CH and H radicals have come to be criteria for the formation of diamonds, and the ratio of radicals drastically affected the characteristics of the deposits. Nucleation and growth mechanism are also discussed.

Copyright information

© Chapman and Hall Ltd 1987

Authors and Affiliations

  • Y. Mitsuda
    • 1
  • Y. Kojima
    • 1
  • T. Yoshida
    • 1
  • K. Akashi
    • 1
  1. 1.Department of Metallurgy and Materials Science, Faculty of EngineeringThe University of TokyoBunkyo-ku, TokyoJapan

Personalised recommendations