Journal of Materials Science

, Volume 21, Issue 12, pp 4366–4368

Thermal expansion of the cubic (3C) polytype of SiC

Authors

  • Z. Li
    • Department of Materials Science and EngineeringUniversity of Washington
  • R. C. Bradt
    • Department of Materials Science and EngineeringUniversity of Washington
Papers

DOI: 10.1007/BF01106557

Cite this article as:
Li, Z. & Bradt, R.C. J Mater Sci (1986) 21: 4366. doi:10.1007/BF01106557

Abstract

Thermal expansion of the cubic beta or (3C) polytype of SiC was measured from 20 to 1000° C by the X-ray diffraction technique. Over that temperature range, the coefficient of thermal expansion can be expressed as the second order polynominal: α11=3.19×10−6+ 3.60×10−9T−1.68×10−12T2 (1/° C). It increases continuously from about 3.2×10−6/° C at room temperature to 5.1×10−6/° C at 1000° C, with an average value of 4.45 × 10−6/° C between room temperature and 1000° C. This trend is compared with other published results and is discussed in terms of structural contributions to the thermal expansion.

Copyright information

© Chapman and Hall Ltd. 1986