Internal parameters of GaAs incoherent light sources
- Cite this article as:
- Karikh, E.D., Manak, I.S., Popov, Y.V. et al. Soviet Physics Journal (1976) 19: 22. doi:10.1007/BF00894308
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A method is used for separately measuring the radiative and radiationless lifetimes of nonequilibrium charge carriers in injection sources of incoherent light. The lifetimes, internal quantum efficiency, and the optical loss coefficient in the radiative recombination region are found for two types of homogeneous junction gallium arsenide laser diodes operating in the incoherent regime. It is shown that diffusively grown samples, having a greater internal quantum efficiency than epitaxial samples, also have higher losses due to absorption.