Influence of annealing on the concentration profiles of boron implantations in silicon
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The influence of annealing on the concentration profiles of boron implanted into silicon with does of 1014 ions/cm2 up to 1016 ions/cm2 and an energy of 70 keV was studied. The concentration profiles were measured with Secondary Ion Mass Spectrometry (SIMS).
The broadening of the concentration profiles during annealing can be described as a superposition of effects resulting from a relatively immobile and a mobile boron fraction. The properties of the immobile boron fraction were studied by measuring the influence of a boron implantation on the distribution of a homogeneous boron background dope. From these experiments it was concluded that the immobile boron fraction consists of boron precipitates. The properties of the mobile fraction were studied from concentration profiles that were obtained after annealing during different periods at the same temperature. It was found that during the initial stage of the annealing process a fast broadening of the profile occurs; this was assumed to be due to an interstitial type boron diffusion. After prolonged annealing the much slower substitutional type diffusion prevails, due to trapping of the interstitial boron atoms by vacancies.
The reliability of the SIMS method, as applied to profile measurements, was checked for the high boron doses used in this investigation. Excessive boron precipitates, obtained after annealing of a high dose, such as 1016 ions/cm2 at about 1000°C, appear to give some increase of the ion yield.
- Influence of annealing on the concentration profiles of boron implantations in silicon
Volume 2, Issue 5 , pp 265-278
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- Ion implantation
- Annealing behaviour
- Secondary ion mass spectrometry
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