Boron implantations in silicon: A comparison of charge carrier and boron concentration profiles
- Cite this article as:
- Hofker, W.K., Werner, H.W., Oosthoek, D.P. et al. Appl. Phys. (1974) 4: 125. doi:10.1007/BF00884267
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The concentration profiles of boron implanted in silicon were measured using secondary ion mass spectrometry. The accompanying charge carrier profiles were determined by Hall-effect sheet-resistivity measurements combined with layer removal by anodic oxidation and etching.
From a mutual comparison of these profiles an electrically inactive boron fraction was found to exist in the region of maximum boron concentration. This fraction can be correlated with boron precipitates. In high dose implantations the precipitates still exist after annealing at 1000°C.
In the tail of the profile a small electrically inactive boron fraction was observed. This fraction was correlated with fast diffusing non-substitutional boron. Near the surface a charge carrier peak was found that can be correlated with the damage caused by implantation.
The interpretation of the observed electrical effects was facilitated by investigations on boron concentration profiles of layers implanted with different doses and annealed in accordance with different time-temperature schedules.