Applied Physics B

, Volume 34, Issue 3, pp 107–122

Optical four-wave mixing in epitaxial narrow-gap semiconductor films

Authors

  • H. Pascher
    • Physikalisches Institut, Universität
Invited Paper

DOI: 10.1007/BF00697503

Cite this article as:
Pascher, H. Appl. Phys. B (1984) 34: 107. doi:10.1007/BF00697503

Abstract

A short review on the theoretical description of nonlinear optical phenomena which are caused by an electric polarization cubic in the electric field amplitudes is given. Then the microscopic theories for the calculation of the nonlinear susceptibility, especially in semiconductors, are briefly reported. After a short section on the bandstructure of IV–VI compounds in a magnetic field, the lineshapes of the coherent anti-Stokes radiation as a function of the magnetic field are discussed in detail.

In the experimental part measurements of coherent anti-Stokes Raman scattering (CARS) in PbTe and PbSe epitaxial films are reported. We observed pure as well as combined spin flip transitions. These data and the results of additionally observed interbandtransitions were used in least squares fits and consistent sets of bandparameters of PbTe and PbSe were obtained.

PACS

42.65 71.20

List of Most Important Symbols

E

electric field vector

P

electric polarization

ɛ0

electric permeability of vacuum: 8.854×10−12 F/m

ϰ n

susceptibility tensor of rankn+1

ɛГ

dielectric constant

σ

conductivity tensor

μ0

magnetic permeability of vacuum: 4×107 H/m

i

i 2=−1

ω

angular frequency

k

wave vector

t

time

I

imensity

g s

Raman gain

α

absorption constant

E g

energy gap

e

electron electric charge

m *

effective mass

E f

Fermi energy

N

carrier density

г

linewidth

ħ

Planck's constant/2π

B

magnetic displacement vector

n

Landau quantum number

s

spin quantum number

Copyright information

© Springer-Verlag 1984