Journal of Materials Science: Materials in Electronics

, Volume 1, Issue 4, pp 219–224

Preparation of ferroelectric BaTiO3 thin films by metal organic chemical vapour deposition

  • C. H. Lee
  • S. J. Park
Papers

DOI: 10.1007/BF00696081

Cite this article as:
Lee, C.H. & Park, S.J. J Mater Sci: Mater Electron (1990) 1: 219. doi:10.1007/BF00696081

Abstract

Polycrystalline BaTiO3 thin films have been successfully prepared on (100) silicon substrates at temperatures under 600° C by metal organic chemical vapour deposition using barium acetylacetonate and diisopropoxy-titanium-bis-(acetylacetonate). To vaporize the barium acetylacetonate, which is nonvolatile under 300° C and thermally unstable, an ultrasonic spraying technique was used. The substrate temperature had a great influence on the structure and composition of films and the single-phase BaTiO3 films could be prepared at 500° C. At temperatures above 550° C the reaction between the film and the silicon substrate occurred to a large extent. The polarization-electric field (P-E) hysteresis loops and counter-clockwise direction of hysteresis in the high-frequency (1 MHz)C-V characteristics indicate that the BaTiO3 films deposited on silicon using the present method are ferroelectric.

Copyright information

© Chapman and Hall Ltd. 1990

Authors and Affiliations

  • C. H. Lee
    • 1
  • S. J. Park
    • 1
  1. 1.Department of Inorganic Materials EngineeringSeoul National UniversitySeoulKorea