Laser beam defocusing at 1.06 μm by carrier excitation in silicon
- Cite this article as:
- Jun, C. & Eichler, H.J. Appl. Phys. B (1988) 45: 121. doi:10.1007/BF00695279
Laser beams from a 15 ns pulsed Nd: YAG laser are defocused after passing silicon crystals with 400 μm thickness. The beam profile changes into a ring structure at incident laser energies up to 30 mJ and energy densities of 440 mJ/cm2. The experimental deflection angles agree with calculations assuming refractive index changes due to electronhole pairs produced by interband absorption.