Applied Physics B

, Volume 45, Issue 3, pp 121–124

Laser beam defocusing at 1.06 μm by carrier excitation in silicon

  • Chen Jun
  • H. -J. Eichler

DOI: 10.1007/BF00695279

Cite this article as:
Jun, C. & Eichler, H.J. Appl. Phys. B (1988) 45: 121. doi:10.1007/BF00695279


Laser beams from a 15 ns pulsed Nd: YAG laser are defocused after passing silicon crystals with 400 μm thickness. The beam profile changes into a ring structure at incident laser energies up to 30 mJ and energy densities of 440 mJ/cm2. The experimental deflection angles agree with calculations assuming refractive index changes due to electronhole pairs produced by interband absorption.


42.65K 72.20J 78.20 

Copyright information

© Springer-Verlag 1988

Authors and Affiliations

  • Chen Jun
    • 1
  • H. -J. Eichler
    • 1
  1. 1.Optisches InstitutTechnische UniversitätBerlin 12

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