Laser beam defocusing at 1.06 μm by carrier excitation in silicon
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- Jun, C. & Eichler, H.J. Appl. Phys. B (1988) 45: 121. doi:10.1007/BF00695279
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Laser beams from a 15 ns pulsed Nd: YAG laser are defocused after passing silicon crystals with 400 μm thickness. The beam profile changes into a ring structure at incident laser energies up to 30 mJ and energy densities of 440 mJ/cm2. The experimental deflection angles agree with calculations assuming refractive index changes due to electronhole pairs produced by interband absorption.