Optical and Quantum Electronics

, Volume 11, Issue 2, pp 109–117

Temperature dependent characteristics of a PIN avalanche photodiode (APD) in Ge, Si and GaAs

  • Y. K. Su
  • C. Y. Chang
  • T. S. Wu
Papers

DOI: 10.1007/BF00624389

Cite this article as:
Su, Y.K., Chang, C.Y. & Wu, T.S. Opt Quant Electron (1979) 11: 109. doi:10.1007/BF00624389

Abstract

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs PIN avalanche photodiodes. The temperature coefficient of avalanche breakdown voltage in a high field region is studied. Finally the response time of a PIN APD in these materials is discussed.

Copyright information

© Chapman and Hall Ltd. 1979

Authors and Affiliations

  • Y. K. Su
    • 1
  • C. Y. Chang
    • 1
  • T. S. Wu
    • 1
  1. 1.Research Institute of Electronics and Electrical EngineeringNational Cheng Kung UniversityTaiwanRepublic of China