Temperature dependent characteristics of a PIN avalanche photodiode (APD) in Ge, Si and GaAs Authors
Cite this article as: Su, Y.K., Chang, C.Y. & Wu, T.S. Opt Quant Electron (1979) 11: 109. doi:10.1007/BF00624389 Abstract
A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs PIN avalanche photodiodes. The temperature coefficient of avalanche breakdown voltage in a high field region is studied. Finally the response time of a PIN APD in these materials is discussed.
This paper is supported by the National Science Council, the Republic of China.
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© Chapman and Hall Ltd. 1979