Applied Physics A

, Volume 28, Issue 2, pp 79–92

Oxygen diffusion and thermal donor formation in silicon

Authors

  • U. Gösele
    • Institut für PhysikMax-Planck-Institut für Metallforschung
  • T. Y. Tan
    • IBM T.J. Watson Research Center
Invited Paper

DOI: 10.1007/BF00617135

Cite this article as:
Gösele, U. & Tan, T.Y. Appl. Phys. A (1982) 28: 79. doi:10.1007/BF00617135

Abstract

The information available on the diffusion of oxygen and on the formation of thermal donors in silicon is critically reviewed. In this context the effects of intrinsic point defects on the diffusion-controlled growth of oxygen precipitates is investigated in some detail. Seemingly contradictory experimental results on the diffusivity of oxygen in silicon at temperatures around 400° C are explained in terms offast-diffusing gas-like molecular oxygen in silicon. The concept of molecular oxygen is also invoked in a newly suggested model of thermal donor formation in silicon. The diffusivity of molecular oxygen in silicon is estimated to be around 10−9cm2s−1 at 450° C, almost nine orders of magnitude higher than the diffusivity of atomic oxygen in interstitial position.

PACS

61.7066.3085.30

Copyright information

© Springer-Verlag 1982