Applied Physics A

, Volume 36, Issue 1, pp 1–13

Dislocation-related photoluminescence in silicon

  • R. Sauer
  • J. Weber
  • J. Stolz
  • E. R. Weber
  • K. -H. Küsters
  • H. Alexander
Invited Paper

DOI: 10.1007/BF00616453

Cite this article as:
Sauer, R., Weber, J., Stolz, J. et al. Appl. Phys. A (1985) 36: 1. doi:10.1007/BF00616453
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Abstract

Photoluminescence is studied in silicon, deformed in a well-defined and reproducible way. Usual deformation conditions (high temperature, low stress) result in sharp spectra of the D1 through D4 lines as recently described in the literature. New lines D5 and D6 emerge for predeformation as above and subsequent low-temperature, high-stress deformation. Another new sharp line, D12, is observed when both the familiar and the novel lines appear simultaneously. Annealing for 1 h atTA≳ 300 °C causes all new lines to disappear and the D1–D4 spectra to reappear. Quantitative annealing and TEM micrographs suggest that D5 is related to straight dislocations and D6 to stacking faults, whereas D1–D4 are due to relaxed dislocations. Photoluminescence under uniaxial stress shows that D1/D2 originate in tetragonal defects with random orientation relative to 〈100〉 directions, whereas D6 stems from triclinic centers, preferentially oriented — as are the D3/D4 centers. We conclude that the D3/D4 and the D5 and D6 defects are closely related, whereas the independent D1/D2 centers might be deformation-produced point defects in the strain region of dislocations.

PACS

78.55.-m 78.55.Ds 71.55.Fr 

Copyright information

© Springer-Verlag 1985

Authors and Affiliations

  • R. Sauer
    • 1
  • J. Weber
    • 1
  • J. Stolz
    • 1
  • E. R. Weber
    • 2
  • K. -H. Küsters
    • 2
  • H. Alexander
    • 2
  1. 1.Physikalisches Institut (Teil 4)Universität StuttgartStuttgart 80Fed. Rep. Germany
  2. 2.Abteilung für Metallphysik im II. Physikalischen InstitutUniversität KölnKöln 41Fed. Rep. Germany

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