Journal of Materials Science

, Volume 7, Issue 10, pp 1119–1124

The crystal growth and thermoelectric properties of chromium disilicide

Authors

  • I. Nishida
    • National Research Institute for Metals
Papers

DOI: 10.1007/BF00550193

Cite this article as:
Nishida, I. J Mater Sci (1972) 7: 1119. doi:10.1007/BF00550193
  • 167 Views

Abstract

Single crystals of chromium disilicide about 8 mm in diameter and 35 mm long were grown using the floating zone technique. Measurements of electrical resistivity ρ, Hall coefficient R and thermoelectric power α were carried out in the temperature range from 85 to 1100 K. The values of ρ and α showed the anisotropy over the temperature range studied. The ratios parallel and perpendicular to the c-axis were ρ/ρ=1.9 and α/α⊥=1.7 respectively, at room temperature. It was found to be a degenerate semiconductor having the hole concentration of 6.3×1020 cm−3 below 600 K. The effective masses of holes parallel and perpendicular to the c-axis determined from the thermoelectric power and the hole concentration near room temperature were estimated to be five and three times as large as a free electron mass, respectively. The calculation on the values of α and α was made using those effective masses. These values showed good agreement with the observed values in the temperature range from 150 to 1100 K.

Download to read the full article text

Copyright information

© Chapman and Hall Ltd 1972