The crystal growth and thermoelectric properties of chromium disilicide
- Cite this article as:
- Nishida, I. J Mater Sci (1972) 7: 1119. doi:10.1007/BF00550193
- 176 Downloads
Single crystals of chromium disilicide about 8 mm in diameter and 35 mm long were grown using the floating zone technique. Measurements of electrical resistivity ρ, Hall coefficient R and thermoelectric power α were carried out in the temperature range from 85 to 1100 K. The values of ρ and α showed the anisotropy over the temperature range studied. The ratios parallel and perpendicular to the c-axis were ρ‖/ρ⊥=1.9 and α‖/α⊥=1.7 respectively, at room temperature. It was found to be a degenerate semiconductor having the hole concentration of 6.3×1020 cm−3 below 600 K. The effective masses of holes parallel and perpendicular to the c-axis determined from the thermoelectric power and the hole concentration near room temperature were estimated to be five and three times as large as a free electron mass, respectively. The calculation on the values of α‖ and α⊥ was made using those effective masses. These values showed good agreement with the observed values in the temperature range from 150 to 1100 K.