Applied Physics A

, Volume 53, Issue 4, pp 324–329

Growth and melting behaviour of thin in films on Ge(100)

  • G. Krausch
  • T. Detzel
  • H. Bielefeldt
  • R. Fink
  • B. Luckscheiter
  • R. Platzer
  • U. Wöhrmann
  • G. Schatz
Surfaces And Maltilagers

DOI: 10.1007/BF00357195

Cite this article as:
Krausch, G., Detzel, T., Bielefeldt, H. et al. Appl. Phys. A (1991) 53: 324. doi:10.1007/BF00357195

Abstract

Growth and melting behaviour of thin indium films on Ge(100) have been investigated by Auger-electron spectroscopy (AES), atomic force microscopy (AFM) and perturbed γγ angular correlation (PAC) spectroscopy, respectively. At room temperature inidium is found to grow in three-dimensional islands even at submonolayer coverages. A very rough film surface is observed for thicknesses up to 230 ML. The melting behaviour of such films has been studied by PAC. A reduction of the melting temperature Tm as well as a strong supercooling of the films is observed. The electric field gradient for 111In(111Cd) in the indium islands is determined as a function of temperature and is used to monitor the local crystalline order of the films up to temperatures just below the melting point.

PACS

64.70.Dv68.55.Jk76.80.+y

Copyright information

© Springer-Verlag 1991

Authors and Affiliations

  • G. Krausch
    • 1
  • T. Detzel
    • 1
  • H. Bielefeldt
    • 1
  • R. Fink
    • 1
  • B. Luckscheiter
    • 1
  • R. Platzer
    • 1
  • U. Wöhrmann
    • 1
  • G. Schatz
    • 1
  1. 1.Fakultät für PhysikUniversität KonstanzKonstanzFed. Rep. Germany