Applied Physics A

, Volume 58, Issue 3, pp 223–227

The properties of boron carbide/silicon heterojunction diodes fabricated by Plasma-Enhanced Chemical Vapor Deposition

  • Sunwoo Lee
  • P. A. Dowben
Surfaces And Multilayers

DOI: 10.1007/BF00324380

Cite this article as:
Lee, S. & Dowben, P.A. Appl. Phys. A (1994) 58: 223. doi:10.1007/BF00324380

Abstract

p-n heterojunction diodes have been fabricated from boron carbide (B1−xCx) and n-type Si(111). Boron carbide thin films were deposited on Si(111) using Plasma-Enhanced Chemical Vapor Deposition (PECVD) from nido-pentaborane (B5H9) and methane (CH4). Composition of boron carbide thin films was controlled by changing the relative partial pressure ratio between nido-pentaborane and methane. The properties of the diodes were strongly affected by the composition and thickness of boron carbide layer and operation temperatures. Boron carbide/silicon heterojunction diodes show rectifying properties at temperatures below 300° C. The temperature dependence of reverse current is strongly dependent upon the energy of the band gap of the boron carbide films.

PACS

81.15.Gh82.30.Lp

Copyright information

© Springer-Verlag 1994

Authors and Affiliations

  • Sunwoo Lee
    • 1
  • P. A. Dowben
    • 2
  1. 1.Department of Physics and the Solid State Science and Technology ProgramSyracuse UniversitySyracuseUSA
  2. 2.Department of Physics and Astronomy, Behlen Laboratory of PhysicsUniversity of NebraskaLincolnUSA