Laser induced forward transfer: The effect of support-film interface and film-to-substrate distance on transfer
- Cite this article as:
- Kántor, Z., Tóth, Z. & Szörényi, T. Appl. Phys. A (1992) 54: 170. doi:10.1007/BF00323905
A comparative study on metal pattern deposition of mm2-area by ablating chromium and titanium thin films from an optically transparent support and transferring the ablated material onto another substrate in close proximity with a single laser pulse (LIFT) is reported. The role of support-film interface and film-to-substrate distance in determining both ablation and transfer is discussed. The sequence of events as a function of processing fluence is interpreted by comparing experimental data with calculated temperature distributions. In the case of poorly adhering films the transfer yield is independent of film-to-substrate distance between 0 and 60 μm throughout the fluence range studied. The transmittance of the ablated areas of well adhering films decreases and that of the corresponding prints increases with increasing distance as evaporation becomes dominant.