Abstract
Continuous-wave (CW) laser crystallization (CLC) of amorphous Si (α-Si) has previously been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Unfortunately, their uniformity was poor because the shape of the beam profiles was Gaussian. In this study, α-Si film was replaced by Ni-metal-induced laterally crystallized Si (MILC-Si). MILCLC-Si was MILC-Si irradiated by a CW laser (λ ≈ 532 nm and power ≈ 3.8 W). It was found that the performance and uniformity of the metal-induced laterally crystallized continuous-wave laser crystallization - thin film transistors (MILCLC-TFTs) were much better than those of the CLC-TFTs. Therefore, the MILCLC-TFT is suitable for application in systems on panels.
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Acknowledgements
This project was funded by Sino American Silicon Products Incorporation and the National Science Council of the Republic of China under Grant Nos. 95-2221-E009-087-MY3. Technical supports from the National Nano Device Laboratory, the Center for Nano Science and Technology, and the Nano Facility Center of the National Chiao Tung University are also acknowledged.
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Open Access This is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License ( https://creativecommons.org/licenses/by-nc/2.0 ), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
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Chang, CP., Wu, Y.S. Improved Uniformity and Electrical Performance of Continuous-Wave Laser-Crystallized TFTs Using Metal-Induced Laterally Crystallized Si Film. J. Electron. Mater. 37, 1653–1656 (2008). https://doi.org/10.1007/s11664-008-0536-y
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DOI: https://doi.org/10.1007/s11664-008-0536-y