Abstract
Nitride-based quantum well (QW) LEDs for lighting applications suffer from efficiency issues related to the strong built-in fields due to the difference in electric polarization of the constituent materials. In this paper we present a study based on device simulation showing the beneficial impact of band gap engineering approaches on device performance in particular for green LEDs.
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Auf der Maur, M., Lorenz, K. & Di Carlo, A. Band gap engineering approaches to increase InGaN/GaN LED efficiency. Opt Quant Electron 44, 83–88 (2012). https://doi.org/10.1007/s11082-011-9536-x
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DOI: https://doi.org/10.1007/s11082-011-9536-x