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Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

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Abstract

This paper explores the significance of using bismuth as a surfactant during the molecular beam epitaxy growth of InAs quantum dots (QDs). The results show that Bi-mediated growth provides a practical solution towards achieving lower density QDs with high optical quality. The InAs QDs grown using Bi as a surfactant exhibit a 50 % lower QD density, narrower QD size distribution, and a doubled photoluminescence peak intensity at 16 K compared to those grown without Bi.

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Abbreviations

Bi:

Bismuth

QDs:

Quantum dots

In:

Indium

Sb:

Antimony

PL:

Photoluminescence

MBE:

Molecular beam epitaxy

MOCVD:

Metal organic chemical vapor deposition

ML:

Monolayer

AFM:

Atomic force microscopy

RT:

Room temperature

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Acknowledgments

This work was supported by NSF Career Award No. DMR-1149605, MRSEC Program of NSF Grant No. DMR-0520550, Arkansas Biosciences Institute and NSFC-51272038.

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Correspondence to Shui-Qing Yu.

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Fan, D., Zeng, Z., Dorogan, V.G. et al. Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy. J Mater Sci: Mater Electron 24, 1635–1639 (2013). https://doi.org/10.1007/s10854-012-0987-z

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  • DOI: https://doi.org/10.1007/s10854-012-0987-z

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