Abstract
This paper explores the significance of using bismuth as a surfactant during the molecular beam epitaxy growth of InAs quantum dots (QDs). The results show that Bi-mediated growth provides a practical solution towards achieving lower density QDs with high optical quality. The InAs QDs grown using Bi as a surfactant exhibit a 50 % lower QD density, narrower QD size distribution, and a doubled photoluminescence peak intensity at 16 K compared to those grown without Bi.
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Abbreviations
- Bi:
-
Bismuth
- QDs:
-
Quantum dots
- In:
-
Indium
- Sb:
-
Antimony
- PL:
-
Photoluminescence
- MBE:
-
Molecular beam epitaxy
- MOCVD:
-
Metal organic chemical vapor deposition
- ML:
-
Monolayer
- AFM:
-
Atomic force microscopy
- RT:
-
Room temperature
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Acknowledgments
This work was supported by NSF Career Award No. DMR-1149605, MRSEC Program of NSF Grant No. DMR-0520550, Arkansas Biosciences Institute and NSFC-51272038.
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Fan, D., Zeng, Z., Dorogan, V.G. et al. Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy. J Mater Sci: Mater Electron 24, 1635–1639 (2013). https://doi.org/10.1007/s10854-012-0987-z
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DOI: https://doi.org/10.1007/s10854-012-0987-z