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Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films

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Abstract

The performance of optoelectronic devices critically depends on the quality of active layer. An effective way to obtain a high quality layers is by creating excess of metal atoms through various heat treatments. Recently, rapid thermal annealing (RTA) has proved a versatile technique for the post-treatment of semiconductor materials as compared to other techniques due to its precise control over the resources. Thus, we carried out a set of experiments on SnS films to explore the influence of RTA treatment on their properties. From these experiments we noticed that the films treated at 400 °C for 1 min in N2 atmosphere have a low electrical resistivity of ~5 Ωcm with relatively high Hall mobility and carrier density of 99 cm2/Vs and 1.3 × 1016 cm−3, respectively. The observed results, therefore, emphasise that it is possible to obtain good quality SnS films through RTA treatment without disturbing their crystal structure.

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Authors and Affiliations

  1. Department of Physics, Sri Venkateswara University, Tirupati, 517502, India

    M. Devika

  2. Department of Physics, Indian Institute of Science, Bangalore, 560012, India

    N. Koteeswara Reddy & K. Ramesh

  3. School of Chemistry, Tel Aviv University, 69978, Tel Aviv, Israel

    N. Koteeswara Reddy

  4. Department of Physics, S. V. University PG Centre, Kavali, 524201, India

    S. Venkatramana Reddy

  5. Department of Instrumentation, Indian Institute of Science, Bangalore, 560012, India

    K. R. Gunasekhar

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  1. M. Devika
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  3. S. Venkatramana Reddy
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  4. K. Ramesh
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  5. K. R. Gunasekhar
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Correspondence to N. Koteeswara Reddy or K. R. Gunasekhar.

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Devika, M., Koteeswara Reddy, N., Venkatramana Reddy, S. et al. Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films. J Mater Sci: Mater Electron 20, 1129–1134 (2009). https://doi.org/10.1007/s10854-008-9838-3

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  • DOI: https://doi.org/10.1007/s10854-008-9838-3

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