Abstract
The performance of optoelectronic devices critically depends on the quality of active layer. An effective way to obtain a high quality layers is by creating excess of metal atoms through various heat treatments. Recently, rapid thermal annealing (RTA) has proved a versatile technique for the post-treatment of semiconductor materials as compared to other techniques due to its precise control over the resources. Thus, we carried out a set of experiments on SnS films to explore the influence of RTA treatment on their properties. From these experiments we noticed that the films treated at 400 °C for 1 min in N2 atmosphere have a low electrical resistivity of ~5 Ωcm with relatively high Hall mobility and carrier density of 99 cm2/Vs and 1.3 × 1016 cm−3, respectively. The observed results, therefore, emphasise that it is possible to obtain good quality SnS films through RTA treatment without disturbing their crystal structure.
Similar content being viewed by others
References
M. Ichimura, K. Takeuchi, Y. Ono, E. Arai, Thin Solid Films 361, 98 (2000). doi:10.1016/S0040-6090(99)00798-1
A.T. Kana, T.G. Hibbert, M.F. Mahon, K.C. Molloy, I.P. Parkin, L.S. Price, Polyhedron 20, 2989 (2001). doi:10.1016/S0277-5387(01)00908-1
M.M. El-Nahass, H.M. Zeyada, M.S. Aziz, N.A. El-Ghamaz, Opt. Mater. 20, 159 (2002). doi:10.1016/S0925-3467(02)00030-7
A. Sanchez-Juarez, A. Ortız, Semicond. Sci. Technol. 17, 931 (2002). doi:10.1088/0268-1242/17/9/305
K.T. Ramakrishna Reddy, P. Purandhara Reddy, P.K. Datta, R.W. Miles, Thin Solid Films 403, 116 (2002). doi:10.1016/S0040-6090(01)01520-6
A. Abou Shama, H.M. Zeyada, Opt. Mater. 24, 555 (2003). doi:10.1016/S0925-3467(03)00138-1
A. Tanusevski, Semicond. Sci. Technol. 18, 501 (2003). doi:10.1088/0268-1242/18/6/318
A. Tanusevski, D. Poelman, Sol. Energy Mater. Sol. Cells 80, 297 (2003). doi:10.1016/j.solmat.2003.06.002
B. Subramanian, C. Sanjeeviraja, M. Jayachandran, Mater. Chem. Phys. 71, 40 (2001)
H.M. Pathan, C.D. Lokhande, Bull. Mater. Sci. 27, 85 (2004). doi:10.1007/BF02708491
N. Koteeswara Reddy, K.T. Ramakrishna Reddy, Phys. B 368, 25 (2005). doi:10.1016/j.physb.2005.06.032
H. Nozaki, M. Onoda, M. Sekita, K. Kosuda, T. Wada, J. Solid State Chem. 178, 245 (2005). doi:10.1016/j.jssc.2004.11.031
H. Ben Haj Salah, H. Bouzouita, B. Rezig, Thin Solid Films 480, 439 (2005). doi:10.1016/j.tsf.2004.11.035
N. Sato, M. Ichimura, E. Arai, Y. Yamazaki, Sol. Energy Mater. Sol. Cells 85, 153 (2005). doi:10.1016/j.solmat.2004.04.014
N. Koteeswara Reddy, K. Ramesh, R. Ganesan, K.T. Ramakrishna Reddy, K.R. Gunasekhar, E.S.R. Gopal, Appl. Phys. A 83, 133 (2006). doi:10.1007/s00339-005-3475-y
M. Devika, K.T. Ramakrishna Reddy, N. Koteeswara Reddy, K. Ramesh, R. Ganesan, E.S.R. Gopal, K.R. Gunasekhar, J. Appl. Phys. 100, 023518 (2006). doi:10.1063/1.2216790
N. Koteeswara Reddy, Y.B. Hahn, M. Devika, H.R. Sumana, K.R. Gunasekhar, J. Appl. Phys. 101, 093522 (2007). doi:10.1063/1.2729450
S. Cheng, Y. Chen, Y. He, G. Chen, Mater. Lett. 61, 1408 (2007). doi:10.1016/j.matlet.2006.07.067
M. Devika, N. Koteeswara Reddy, D. Sreekantha Reddy, S. Venkatramana Reddy, K. Ramesh, E.S.R. Gopal, K.R. Gunasekhar, V. Ganesan, Y.B. Hahn, J. Phys. Condens. Matter 19, 306003 (2007). doi:10.1088/0953-8984/19/30/306003
D. Avellaneda, G. Delgado, M.T.S. Nair, P.K. Nair, Thin Solid Films 515, 5771 (2007). doi:10.1016/j.tsf.2006.12.078
M. Devika, N. Koteeswara Reddy, D. Sreekantha Reddy, Q. Ahsanulhaq, K. Ramesh, E.S.R. Gopal, K.R. Gunasekhar, Y.B. Hahn, J. Electrochem. Soc. 155, H130 (2008). doi:10.1149/1.2819677
S. Biswas, S. Kar, S. Chaudhuri, Appl. Surf. Sci. 253, 9259 (2007). doi:10.1016/j.apsusc.2007.05.053
Y. Li, J.P. Tu, X.H. Huang, H.M. Wu, Y.F. Yuan, Electrochem. Commun. 9, 49 (2007). doi:10.1016/j.elecom.2006.08.019
Y.J. Yang, B.J. Xiang, Appl. Phys. A 83, 461 (2006). doi:10.1007/s00339-006-3572-6
H. Hu, B. Yang, J. Zeng, Y. Qian, Mater. Chem. Phys. 86, 233 (2004). doi:10.1016/j.matchemphys.2004.04.001
C. An, K. Tang, Y. Jin, Q. Liu, X. Chen, Y. Qian, J. Crys. Grow. 252, 581 (2003). doi:10.1016/S0022-0248(03)00961-8
Y. Liu, D. Hou, G. Wang, Chem. Phys. Lett. 379, 67 (2003). doi:10.1016/j.cplett.2003.08.014
M. Ristov, G. Sinadinovski, M. Mitreski, M. Ristova, Sol. Energy Mater. Sol. Cells 69, 17 (2001)
A.S. Juarez, A.T. Silver, A. Ortiz, Thin Solid Films 480, 452 (2005). doi:10.1016/j.tsf.2004.11.012
M. Gunasekaran, M. Ichimura, Sol. Energy Mater. Sol. Cells 91, 774 (2007). doi:10.1016/j.solmat.2006.10.026
T. Miyawaki, M. Ichimura, Mater. Lett. 61, 4683 (2007). doi:10.1016/j.matlet.2007.03.006
K.T. Ramakrishna Reddy, N. Koteeswara Reddy, R.W. Miles, Sol. Energy Mater. Sol. Cells 90, 3041 (2006). doi:10.1016/j.solmat.2006.06.012
B. Subramanian, C. Sanjeeviraja, M. Jayachandran, Sol. Energy Mater. Sol. Cells 79, 57 (2003)
A. Hayashi, T. Konishi, K. Tadanaga, T. Minami, M. Tatsumisago, J. Power Sources 146, 496 (2005). doi:10.1016/j.jpowsour.2005.03.056
V. Raghavan, Materials Science and Engineering, vol. 4 (Prentice Hall of India, New Delhi, 1999), p. 181
H. Kim, J.S. Horwize, S.B. Qadri, D.B. Chrisey, Thin Solid Films 107, 420 (2002)
A. Suzuki, T. Matsushita, N. Wada, Y. Sakamoto, M. Okuda, Jpn. J. Appl. Phys. 35, L56 (1996)
X.J. Zheng, W.M. Yi, Y.Q. Chen, Q.Y. Wu, L. He, Scr. Mater. 57, 675 (2007). doi:10.1016/j.scriptamat.2007.06.045
M. Devika, N. Koteeswara Reddy, K. Ramesh, K.R. Gunasekhar, E.S.R. Gopal, K.T. Ramakrishna Reddy, Semicond. Sci. Technol. 21, 1125 (2006). doi:10.1088/0268-1242/21/8/025
H.Z. Massoud, in Rapid Thermal Annealing Processing: Science and Technology, ed. by R.B. Fair (Academic, Boston, 1993), p. 58
M. Devika, N. Koteeswara Reddy, K. Ramesh, R. Ganesan, K.R. Gunasekhar, E.S.R. Gopal, K.T. Ramakrishna Reddy, J. Electrochem. Soc. 154, H67 (2007). doi:10.1149/1.2398816
D. Trbojevic, P.M. Nikolic, B. Perovic, V. Cvekic, Appl. Phys. Lett. 38, 362 (1981). doi:10.1063/1.92378
J.M. Chamberlain, P.M. Nikolic, M. Merdan, P. Mihailovic, J. Phys. C: Solid State Phys. 9, L637 (1976). doi:10.1088/0022-3719/9/22/004
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Devika, M., Koteeswara Reddy, N., Venkatramana Reddy, S. et al. Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films. J Mater Sci: Mater Electron 20, 1129–1134 (2009). https://doi.org/10.1007/s10854-008-9838-3
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-008-9838-3