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In-situ elevated-temperature TEM study of (AgSbTe2)15(GeTe)85

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Abstract

(AgSbTe2)15(GeTe)85 (TAGS-85) is a p-type semiconductor characterized by a maximum dimensionless thermoelectric figure of merit of 1.4–1.7 at elevated temperature. In this study, the microstructure of as-solidified TAGS-85 at room temperature and elevated temperature (160 °C) was investigated using TEM. At room temperature, pervasive twinning was observed throughout the specimen. Upon heating to above 120 °C, some of the twins dissolved and new point defects began to nucleate. The mechanisms responsible for formation of high temperature defects are discussed.

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Acknowledgments

The Ames Laboratory is operated for the U. S. Department of Energy by Iowa State University under contract W-7405-ENG-82. This project was supported by the Office of Naval Research, contract no. N00014-05-IP-20065, monitored by Dr. Mihal Gross.

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Authors and Affiliations

  1. Ames Laboratory Materials and Engineering Physics Program, Iowa State University, Ames, IA, 50011-3020, USA

    Bruce A. Cook, Xuezheng Wei, Joel L. Harringa & Matthew J. Kramer

  2. Department of Materials Science and Engineering, Iowa State University, Ames, IA, 50011-3020, USA

    Matthew J. Kramer

Authors
  1. Bruce A. Cook
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  2. Xuezheng Wei
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  3. Joel L. Harringa
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  4. Matthew J. Kramer
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Correspondence to Bruce A. Cook.

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Cook, B.A., Wei, X., Harringa, J.L. et al. In-situ elevated-temperature TEM study of (AgSbTe2)15(GeTe)85 . J Mater Sci 42, 7643–7646 (2007). https://doi.org/10.1007/s10853-007-1898-x

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  • DOI: https://doi.org/10.1007/s10853-007-1898-x

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