Cited References
41Kle: W. Klemm and P. Pirscher, “Silicon Arsenide,”Z. Anorg. Chem., 247, 211–220 (1941) in German. (Equi Diagram; Experimental; Indicates presence of a phase diagram)
53Hal: R.N. Hall, “Segregation of Impurities During the Growth of Germanium and Silicon Crystals,”J. Phys. Chem., 57, 836–839 (1953). (Equi Diagram; Experimental)
53Thu: C.D. Thurmond, “Equilibrium Thermochemistry of Solid and Liquid Alloys of Germanium and of Silicon. I.,”J. Phys. Chem., 57, 827–830 (1953). (Thermo; Theory)
54Bur: J.A. Burton, “Impurity Centers in Ge and Si,”Phys., 20, 845–854 (1954). (Equi Diagram; Theory)
54Sch: K. Schubert, E. Dörre, and Günzel, “Crystal Structure Data for B-Element Phases,”Naturwissenschaften, 41, 448 (1954) in German. (Crys Structure; Experimental)
58Wei: K. Weiser, “Theoretical Calculation of Distribution Coefficients of Impurities in Germanium and Silicon, Heats of Solid Solution,”J. Phys. Chem. Solids, 7, 118–126 (1958). (Thermo; Theory)
60Thu: C.D. Thurmond and M. Kowalchik, “Germanium and Silicon Liquidus Curves,”Bell Sys. Tech. J., 39, 169–204 (1960). (Thermo; Theory)
60Tru: F.A. Trumbore, “Solid Solubilities of Impurity Elements in Germanium and Silicon,”Bell Sys. Tech. J., 39, 205–233 (1960). (Equi Diagram; Review)
65Wad: T. Wadsten, “The Crystal Structure of SiAs,”Acta Chem. Scand., 19, 1232–1238 (1965). (Crys Structure; Experimental)
66Bec: C.G. Beck and R. Stickler, “Crystallography of SiP and SiAs Single Crystals and of SiP Precipitates in Si,”J. Appl. Phys., 37, 4683–4687 (1966). (Crys Structure; Experimental)
67Wad: T. Wadsten, “The Crystal Structures of SiP2, SiAs2, and GeP,”Acta Chem. Scand., 21, 590–594 (1967). (Crys Structure; Experimental)
68Don: P.C. Donohue, W.J. Shemons, and J.L. Gillson, “Preparation and Properties of Pyrite-Type SiP2 and SiAs2,”J. Phys. Chem. Solids, 29, 807–813 (1968). (Crys Structure, Pressure; Experimental)
70Rai: P. Rai-Choudhury and E.I. Salkovitz, “Doping of Epitaxial Silicon,”J. Crys. Growth, 7, 353–360 (1970). (Thermo; Theory)
70Rao: M.V. Rao and W.A. Tiller, “Excess Free Energies in the Ge, Si and Ga Binary Systems—the α-Parameter Approach,”J. Phys. Chem. Solids, 31, 191–198 (1970). (Thermo; Theory)
Indicates key paper71San: J.S. Sandhu, and J.L. Reuter, “Arsenic Source Vapor Pressure Kinetics and Capsule Diffusion,”IBM J. Res. Develop., 15, 464–471 (1971). (Equi Diagram; Experimental; Indicates presence of a phase diagram)
73Fai: R.B. Fair and G.R. Weber, “Effect of Complex Formation on Diffusion of Arsenic in Silicon,”J. Appl. Phys., 44, 273–279 (1973). (Equi Diagram; Experimental)
73Sha: V.I. Shachnev, “Determination of Henry's Constants in the Crystallization from the Gas Phase of Epitaxial Silicon Layers Alloyed with Phosphorus and Arsenic,”Russ. J. Phys. Chem., 47, 132–134 (1973). (Thermo; Experimental)
73Uga: Ya. A. Ugay and S.N. Miroshnichenko, “Formation and Thermal Dissociation of SiAs2,Izv. Akad. Nauk SSSR Neorg. Mat. 9, 2051–2052 (1973) in Russian. (Crys Structure, Equi Diagram; Experimental)
74Jor: A.S. Jordan and M.E. Weiner, “Calculation of the Liquidus Isotherms and Component Activities in the Ga−As−Si and Ga−P−Si Ternary Systems,”J. Electrochem. Soc., 121, 1634–1641 (1974). (Thermo; Theory)
74Miy: N. Miyamoto, E. Kuroda, and S. Yoshida, “The Behavior of Arsenic in Silicon During Heat Treatment,”J. Jpn. Soc. Appl. Phys., Suppl., 43, 408–414 (1974). (Equi Diagram; Experimental)
74Uga: Ya.A. Ugay, S.N. Miroshnichenko, and E.G. Goncharov, “Investigation of thep-T-x diagram of the Si−As System,”Izv. Akad. Nauk SSSR Neorg. Mat., 10, 1774–1777 (1974) in Russian. (Equi Diagram, Thermo; Experimental; Indicates presence of a phase diagram)
75Fai: R.B. Fair and J.C.C. Tsai, “The Diffusion of Ion-Implanted Arsenic in Silicon,”J. Electrochem. Soc., 122, 1689–1696 (1975). (Equi Diagram; Experimental)
75Ohk: S. Ohkawa, Y. Nakajima, and Y. Fukukawa, “Arsenic Diffusion into Silicon from Elemental Source,”Jpn J. Appl. Phys., 14, 458–465 (1975). (Equi Diagram; Experimental)
77Bar: I. Barin, O. Knacke, and O. Kubaschewski,Thermochemical Properties of Inorganic Substances (Supplement), Springer-Verlag, New York (1977). (Thermo; Compilation)
77Gei: H.-D. Geiler, G. Götz, K.-D. Klinge, and N. Triem, “Investigation of Laser Induced Diffusion and Annealing Processes of Arsenic-Implanted Silicon Crystals,”Phys. Status Solidi (a), 41, K171-K173 (1977). (Meta Phases; Experimental)
77Sud: V.S. Sudavtsova and G.I. Batalin, “Calculation of the Activities of the Components of Liquid Me−Si Alloys from the Phase Diagrams,”Ukr. Khim. Zh., 43, 235–240 (1977) in Russian. (Thermo; Theory)
78Sri: G.R. Srinivasan, “Kinetics of Lateral Autodoping in Silicon Epitaxy,”J. Electrochem. Soc., 125, 146–151 (1978). (Thermo; Theory)
78Ven: T.N.C. Venkatesan, J.A. Golovchenko, J.M. Poate, P. Cowan, and G.K. Celler, “Dose Dependence in the Laser Annealing of Arsenic-Implanted Silicon,”Appl. Phys. Lett., 33, 429–431 (1978). (Meta Phases; Experimental)
79Bel: V.I. Belousov, “Calculation of the Activity Coefficient of Arsenic in Single Crystal Silicon,”Russ. J. Phys. Chem., 53, 1266–1267 (1979). (Thermo; Theory)
79Lie: A. Lietoila, J.F. Gibbons, T.J. Magee, J. Peng, and J.D. Hong, “Solid Solubility of As in Si as Determined by Ion Implantation and CW Laser Annealing,”Appl. Phys. Lett., 35, 532–534 (1979). (Equi Diagram; Experimental)
80Fai: R.B. Fair, “Modeling Laser-Induced Diffusion of Implanted Arsenic in Silicon,”Proc. Electrochem. Soc., 80–81, 204–219 (1980). (Meta Phases; Experimental)
80Whi: C.W. White, S.R. Wilson, B.R. Appleton, and F.W. Young, Jr. “Supersaturated Substitutional Alloys Formed by Ion Implantation and Pulsed Laser Annealing of Group-III and Group-V Dopants in Silicon,”J. Appl. Phys., 51, 738–749 (1980). (Meta Phases; Experimental)
Indicates key paper81Uga: Ya.A. Ugay, E.G. Goncharov, N.F. Gladyshev, A.E. Popov, and N. Yu. Inozemtseva, “Tensimetric Study of the Si−As System,”Fiz. Khim. Prots. Polyprovod. Poverkh, 138–144 (1981) in Russian. (Equi Diagram, Thermo; Experimental; Indicates presence of a phase diagram)
82Gra: T. Graziani, K.T. Short, and J.S. Williams, “Comparison of Solubility Limits and Electrical Activities for Antimony and Arsenic Ion Implanted Silicon,”Phys. Lett., 91A, 231–233 (1982). (Meta Phases; Experimental)
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This program was supported by ASM, under grant No. FG 101-1 to the University of Florida. Thermodynamic calculations were made by using the computer program developed by Drs. A. D. Pelton, W. T. Thompson, and C. W. Bale, at McGill University. Literature was searched through 1983. Professor G.J. Abbaschian is ASM/NBS Data Program Category Editor for binary silicon alloys.
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Olesinski, R.W., Abbaschian, G.J. The As−Si (Arsenic-Silicon) system. Bulletin of Alloy Phase Diagrams 6, 254–258 (1985). https://doi.org/10.1007/BF02880410
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DOI: https://doi.org/10.1007/BF02880410