Skip to main content
SpringerLink
Log in

Multi-layer epitaxially grown silicon impatt diodes at millimeter-wave frequencies

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Complementary (N+PP+) and double-drift (N+NPP+) silicon IMPATT diodes were prepared and investigated as oscillators in the millimeter-wave frequency region of 50 to 70 GHz. All the diodes were fabricated from multi-layer epitaxially grown silicon structures. A maximum CW output power level of 198 mW at 62.9 GHz and a maximum conversion efficiency of 7.3% have been measured for the complementary diodes. The double-drift IMPATT diodes have a maximum CW output power of 400 mW at 56.3 GHz and a maximum conversion efficiency of 8.5%.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. W. E. Schroeder and G. I. Haddad, Proc. IEEE60, 1245 (1972).

    Google Scholar 

  2. A. L. Ward and B. J. Udelson, IEEE ISSCC Digest of Tech. Papers, p. 198–199, Feb. 1972.

  3. T. Misawa, Proc. IEEE56, 234 (1968).

    Google Scholar 

  4. N. B. Kramer, Proc. Fourth Biennial Cornell Elect. Eng. Conf., "Microwave Semiconductor Devices, Circuits and Applications", p. 1, Cornell Univ., Ithaca, N.Y. (1973).

    Google Scholar 

  5. G. A. Swartz, Y. S. Chiang, C. P. Wen and A. Gonzalez, IEEE Trans. Electron DevicesED-21, 165 (1974).

    Google Scholar 

  6. G. A. Swartz, Y. S. Chiang, C. P. Wen and A. Young, Electronic Letters9, 578 (1973).

    Article  Google Scholar 

  7. J. J. Goedbloed and M. T. Vlaardingerbroek, IEEE Trans. Electron DevicesED-21, 342 (1974).

    Google Scholar 

  8. D. L. Scharfetter, W. J. Evans and R. L. Johnston, Proc. IEEE58, 1131 (1970).

    Google Scholar 

  9. T. E. Seidel, W. C. Niehaus and D. E. Iglesias, IEEE Trans. Electron DevicesED-21, 523 (1974).

    CAS  Google Scholar 

  10. T. E. Seidel, R. E. Davis and D. E. Iglesias, Proc. IEEE59, 1222 (1971).

    Article  CAS  Google Scholar 

  11. W. C. Niehaus, T. E. Seidel and D. E. Iglesias, IEEE Trans. Electron DevicesED-20, 765 (1973).

    Google Scholar 

  12. J. B. Price,Semiconductor Silicon 1973, H. R. Huff and R. R. Burgess, Eds., p. 339, The Electrochemical Society, Princeton, N.J. (1973).

    Google Scholar 

  13. C. P. Wen, K. P. Weiler and A. F. Young, IEEE Trans. Electron DevicesED-19, 891 (1972).

    Google Scholar 

  14. D. H. Lee, R. S. Ying and D. M. Jamba, Paper presented at 1974 Millimeter Waves Techniques Conf., paper A7-1, Naval Electronics Laboratory Center, San Diego, Ca., March 1974.

    Google Scholar 

Download references

Author information

Author notes

  1. C. P. Wen

    Present address: Science Center, Rockwell International, Thousand Oaks, California

Authors and Affiliations

  1. RCA Laboratories, 08540, Princeton, New Jersey

    C. P. Wen, Y. S. Chiang & E. J. Denlinger

Authors
  1. C. P. Wen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Y. S. Chiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. E. J. Denlinger
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Wen, C.P., Chiang, Y.S. & Denlinger, E.J. Multi-layer epitaxially grown silicon impatt diodes at millimeter-wave frequencies. J. Electron. Mater. 4, 119–129 (1975). https://doi.org/10.1007/BF02657840

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02657840

Key words

Search

Navigation