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Effect of heavy doping in SnO2:F films

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Abstract

Thin films of fluorine-doped tin dioxide (SnO2:F) were deposited by a spray pyrolysis technique on soda lime glass substrates. Structural and electronic transport properties of the films deposited with different doping levels of fluorine (zero to 350 at %) were investigated. X-ray diffraction technique and Hall effect measurements were used for this work. Growth rate of the films was considerably affected by doping, specially at higher doping levels. The films were polycrystalline and preferentially oriented along [200]. This preferred growth played a dominant role in determining the transport properties. Notably the charge carrier mobility was directly governed by this preferred growth. The electrical conductivity was totally governed by the carrier concentration. The respective changes in carrier concentration were used to suggest the site selection of the fluorine dopant in the SnO2 lattice.

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References

  1. K. L. Chopra, S. Major and D. K. Pandya, Thin Solid Films 102 (1983) 1.

    Article  CAS  Google Scholar 

  2. E. Shanthi, V. Dutta, A. Banerjee and K. L. Chopra, J. Appl. Phys. 51 (1980) 6243.

    Article  CAS  Google Scholar 

  3. J. P. Upadhyay, S. R. Vishwakarma and H. C. Prasad, Thin Solid Films 169 (1989) 195.

    Article  CAS  Google Scholar 

  4. H. Haitjema and G. F. Woerlee, ibid. 169 (1989) 1.

    Article  CAS  Google Scholar 

  5. C. Agashe, M. G. Takwale, V. G. Bhide, S. Mahamuni and S. K. Kulkarni, J. Appl. Phys. 70 (1991) 7382.

    Article  CAS  Google Scholar 

  6. J. C. Manifacier, J. P. Pillard and J. M. Bind, Thin Solid Films 77 (1981) 67.

    Article  CAS  Google Scholar 

  7. B. D. Cullity, “Elements of X-ray Diffraction” (Addison-Wesley, Massachusetts, 1956) p. 99.

    Google Scholar 

  8. W. R. Runyan, “Semiconductor Measurements and Instrumentation” (McGraw Hill, Kogakusha Ltd., Tokyo, 1975) p. 137.

    Google Scholar 

  9. D. K. Murti and T. L. Bluhm, This Solid Films 87 (1982) 57.

    Article  CAS  Google Scholar 

  10. V. A. Johnson and K. Lark-Horovitz, Phys. Rev. 71 (1947) 374.

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Physics, Indian Institute of Technology, 400 076, Powai, Bombay, India

    Chitra Agashe & S. S. Major

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  1. Chitra Agashe
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  2. S. S. Major
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Agashe, C., Major, S.S. Effect of heavy doping in SnO2:F films. JOURNAL OF MATERIALS SCIENCE 31, 2965–2969 (1996). https://doi.org/10.1007/BF00356009

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  • DOI: https://doi.org/10.1007/BF00356009

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