Skip to main content
SpringerLink
Log in
Book cover

Picosecond Electronics and Optoelectronics

Proceedings of the Topical Meeting Lake Tahoe, Nevada, March 13–15, 1985

  • Conference proceedings
  • © 1985

Overview

Editors:
  1. Gerard Albert Mourou

    1. Department of Physics, The University of Rochester, Rochester, USA

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

  2. David M. Bloom

    1. Edward L. Ginzton Laboratory, Stanford University, Stanford, USA

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

  3. Chi-H. Lee

    1. Department of Electrical Engineering, University of Maryland, College Park, USA

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

Part of the book series: Springer Series in Electronics and Photonics (SSEP, volume 21)

This is a preview of subscription content, log in via an institution to check access.

Access this book

Log in via an institution
eBook USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

Licence this eBook for your library

Institutional subscriptions

Table of contents (51 papers)

  1. Front Matter

    Pages I-X
    Download chapter PDF

  2. Ultrafast Optics and Electronics

    1. Front Matter

      Pages 1-1
      Download chapter PDF

    2. Ultrafast Optical Electronics: From Femtoseconds to Terahertz

      • D. H. Auston, K. P. Cheung, J. A. Valdmanis, P. R. Smith
      Pages 2-8

    3. Prospects of High-Speed Semiconductor Devices

      • Naresh Chand, Hadis Morkoç
      Pages 9-17

    4. The Role of Ultrashort Optical Pulses in High-Speed Electronics

      • C. V. Shank
      Pages 18-22

    5. GaAs Integrated Circuit Technology for High Speed Analog and Digital Electronics

      • R. Castagne, G. Nuzillat
      Pages 23-31

    6. Heterojunction Bipolar Transistor Technology for High-Speed Integrated Circuits

      • P. M. Asbeck
      Pages 32-37

    7. Permeable Base Transistor

      • R. A. Murphy
      Pages 38-45

    8. Two Dimensional E-Field Mapping with Subpicosecond Resolution

      • K. E. Meyer, G. A. Mourou
      Pages 46-49

    9. Picosecond Electrooptic Sampling and Harmonic Mixing in GaAs

      • B. H. Kolner, K. J. Weingarten, M. J. W. Rodwell, D. M. Bloom
      Pages 50-53

    10. Characterization of TEGFETs and MESFETs Using the Electrooptic Sampling Technique

      • K. E. Meyer, D. R. Dykaar, G. A. Mourou
      Pages 54-57

    11. Picosecond Electro-Electron Optic Oscilloscope

      • S. Williamson, G. A. Mourou
      Pages 58-61

    12. Picosecond Optoelectronic Diagnostics of Field Effect Transistors

      • Donald E. Cooper, Steven C. Moss
      Pages 62-65

    13. Time-Domain Measurements for Silicon Integrated Circuit Testing Using Photoconductors

      • W. R. Eisenstadt, R. B. Hammond, D. R. Bowman, R. W. Dutton
      Pages 66-69

    14. Modeling of Picosecond Pulse Propagation on Silicon Integrated Circuits

      • K. W. Goossen, R. B. Hammond
      Pages 70-73
Back to top

Keywords

About this book

Over the past decade, we have witnessed a number of spectacular advances in the fabrication of crystalline semiconductor devices due mainly to the pro­ gress of the different techni ques of heteroepitaxy. The di scovery of two­ dimensional behavior of electrons led to the development of a new breed of ultrafast electronic and optical devices, such as modulation doped FETs, permeable base transistors, and double heterojunction transistors. Comparable progress has been made in the domain of cryoelectronics, ultrashort pulse generation, and ultrafast diagnostics. Dye lasers can generate 8 fs signals after compression, diode lasers can be modulated at speeds close to 20 GHz and electrical signals are characterized with subpicosecond accuracy via the electro-optic effect. Presently, we are experiencing an important interplay between the field of optics and electronics; the purpose of this meeting was to foster and enhance the interaction between the two disciplines. It was logical to start the conference by presenting to the two different audiences, i. e. , electronics and optics, the state-of-the-art in the two res­ pective fields and to highlight the importance of optical techniques in the analysis of physical processes and device performances. One of the leading techniques in this area is the electro-optic sampling technique. This optical technique has been used to characterize transmission lines and GaAs devices. Carrier transport in semiconductors is of fundamental importance and some of its important aspects are stressed in these proceedings.

Editors and Affiliations

  • Department of Physics, The University of Rochester, Rochester, USA

    Gerard Albert Mourou

  • Edward L. Ginzton Laboratory, Stanford University, Stanford, USA

    David M. Bloom

  • Department of Electrical Engineering, University of Maryland, College Park, USA

    Chi-H. Lee

Bibliographic Information

Publish with us

Policies and ethics

Back to top

Search

Navigation