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Nitride Semiconductors and Devices

  • Book
  • © 1999

Overview

Authors:
  1. Hadis Morkoç

    1. Department of Electrical Engineering, Virginia Commonwealth University, Richmond, USA

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  • Covers the major developments in light-emitting Nitride semiconductors
  • Integrates physics, materials science, technology, and applications
  • Covers both theory and practice
  • Includes extensive tabular compilation of properties
  • Reference book for researchers as well as a study text for graduate students in physics, chemistry, materials science and energy
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 32)

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Table of contents (12 chapters)

  1. Front Matter

    Pages I-XXIV
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  2. Introduction

    • Hadis Morkoç
    Pages 1-7

  3. General Properties of Nitrides

    • Hadis Morkoç
    Pages 8-44

  4. Electronic Band Structure of Bulk and QW Nitrides

    • Hadis Morkoç
    Pages 45-82

  5. Growth of Nitride Semiconductors

    • Hadis Morkoç
    Pages 83-148

  6. Defects and Doping

    • Hadis Morkoç
    Pages 149-190

  7. Metal Contacts to GaN

    • Hadis Morkoç
    Pages 191-215

  8. Determination of Impurity and Carrier Concentrations

    • Hadis Morkoç
    Pages 216-232

  9. Carrier Transport

    • Hadis Morkoç
    Pages 233-266

  10. The p-n Junction

    • Hadis Morkoç
    Pages 267-294

  11. Optical Processes in Nitride Semiconductors

    • Hadis Morkoç
    Pages 295-339

  12. Light-Emitting Diodes

    • Hadis Morkoç
    Pages 340-378

  13. Semiconductor Lasers

    • Hadis Morkoç
    Pages 379-459

  14. Back Matter

    Pages 461-489
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Keywords

About this book

A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn­ thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim­ al. [3] in 1959 employed the same technique to produce small cry­ meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans­ port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli­ berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro­ as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor.

Authors and Affiliations

  • Department of Electrical Engineering, Virginia Commonwealth University, Richmond, USA

    Hadis Morkoç

Bibliographic Information

  • Book Title: Nitride Semiconductors and Devices

  • Authors: Hadis Morkoç

  • Series Title: Springer Series in Materials Science

  • DOI: https://doi.org/10.1007/978-3-642-58562-3

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer-Verlag Berlin Heidelberg 1999

  • Hardcover ISBN: 978-3-540-64038-7Published: 28 September 1999

  • Softcover ISBN: 978-3-642-63647-9Published: 04 October 2012

  • eBook ISBN: 978-3-642-58562-3Published: 08 March 2013

  • Series ISSN: 0933-033X

  • Series E-ISSN: 2196-2812

  • Edition Number: 1

  • Number of Pages: XXIV, 489

  • Number of Illustrations: 267 b/w illustrations, 7 illustrations in colour

  • Topics: Electronics and Microelectronics, Instrumentation, Optical and Electronic Materials

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