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Gallium Oxide

Materials Properties, Crystal Growth, and Devices

  • Represents the first book dedicated to Ga2O3
  • Focuses on a key research area in ultra-wide-bandgap semiconductors
  • Provides broad coverage from materials properties through devices

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 293)

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Table of contents (40 chapters)

  1. Front Matter

    Pages i-xxviii
  2. Introduction

    • Masataka Higashiwaki
    Pages 1-12
  3. Bulk Growth

    1. Front Matter

      Pages 13-13
    2. Czochralski Method

      • Zbigniew Galazka
      Pages 15-36
    3. Vertical Bridgman Growth Method

      • Keigo Hoshikawa
      Pages 37-55
    4. Floating Zone Method, Edge-Defined Film-Fed Growth Method, and Wafer Manufacturing

      • Akito Kuramata, Kimiyoshi Koshi, Shinya Watanabe, Yu Yamaoka
      Pages 57-75
  4. Epitaxial Growth

    1. Front Matter

      Pages 77-77
    2. Plasma-Assisted Molecular Beam Epitaxy 1

      • Akhil Mauze, James Speck
      Pages 79-93
    3. Plasma-Assisted Molecular Beam Epitaxy 2

      • Oliver Bierwagen, Patrick Vogt, Piero Mazzolini
      Pages 95-121
    4. Ozone-Enhanced Molecular Beam Epitaxy

      • Kohei Sasaki, Shigenobu Yamakoshi, Akito Kuramata
      Pages 123-140
    5. Metalorganic Chemical Vapor Deposition 1

      • Fikadu Alema, Andrei Osinsky
      Pages 141-170
    6. Metal Organic Chemical Vapor Deposition 2

      • Yao Yao, Robert F. Davis, Lisa M. Porter
      Pages 171-184
    7. Halide Vapor Phase Epitaxy 1

      • Yoshinao Kumagai, Keita Konishi, Ken Goto, Hisashi Murakami, Bo Monemar
      Pages 185-202
    8. Halide Vapor Phase Epitaxy 2

      • Yuichi Oshima
      Pages 203-230
    9. Mist Chemical Vapor Deposition 1

      • Shizuo Fujita
      Pages 231-241
    10. Mist Chemical Vapor Deposition 2

      • Hiroyuki Nishinaka
      Pages 243-255
    11. Pulsed Laser Deposition 1

      • Kevin D. Leedy
      Pages 257-271
    12. Pulsed Laser Deposition 2

      • Holger von Wenckstern, Daniel Splith, Marius Grundmann
      Pages 273-291
    13. Low Pressure Chemical Vapor Deposition

      • Hongping Zhao
      Pages 293-306
  5. Materials Properties

    1. Front Matter

      Pages 307-307

About this book

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga₂O₃). Ga₂O₃ has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga₂O₃ is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community.

Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga₂O₃.



Editors and Affiliations

  • National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  • Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

Bibliographic Information

Buy it now

Buying options

eBook USD 149.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 199.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 199.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access