Abstract
The structure of GaAs films grown on Si(001) vicinal substrates (6° rotation about 〈011〉 axis) formed in two ways of nucleation, As deposition on Si and substitution of Si monolayer by As monolayer, is studied. X-ray diffractometry is used to find that the rotation direction of a crystal lattice depends on the manner of nucleation. An optional model of the formation of film dislocation structures is proposed.
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Original Russian Text © I.D. Loshkarev, A.P. Vasilenko, E.M. Trukhanov, A.V. Kolesnikov, M.A. Putyato, B.R. Semyagin, V.V. Preobrazhenskii, O.P. Pchelyakov, 2013, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2013, Vol. 77, No. 3, pp. 264–267.
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Loshkarev, I.D., Vasilenko, A.P., Trukhanov, E.M. et al. Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates. Bull. Russ. Acad. Sci. Phys. 77, 233–235 (2013). https://doi.org/10.3103/S1062873813030234
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DOI: https://doi.org/10.3103/S1062873813030234