Abstract
Decomposition reaction of monosilane in glow discharge plasma of both direct (DC) and alternating current (AC) have been performed. The possibility of nanosilicon synthesis using the glow discharge plasma has been shown. The Raman spectroscopy is applied to study the phase composition and granulometric analysis of the obtained nanosilicon samples. The possibility of the structure and size control of amorphous silicon films with nano crystalline inclusions (a-Si:H/c-Si + nc-Si) by varying pressure and composition of a gas mixture in the process of synthesis has been demonstrated.
Similar content being viewed by others
References
Jun Ma, HeBai Jianjun, Zhang Yujie, Yuan JianNi, and Kailiang Zhang, Size-controlled nc-Si:H/a-SiC:H quantum dots superlattice and its application to hydrogenated amorphous silicon solar cells, Solar Energy Mater. Solar Cells, 2016, vol. 157, pp. 923–929.
Liao, X., Du, W., Yang, X., Povolny, H., Xiang, X., and Deng, X., Nanostructure in thep-layer and its impacts on a morphous silicon solar cells, J. Non-Cryst. Solids, 2006, vol. 352, pp. 1841–1846.
Koval, R.J., Chen, C., Ferreira, G.M., and Ferlauto, A.S., Maximization of the open circuit voltage for hydrogenated amorphous silicon n-i-p solar cells by incorporation of protocrystalline silicon p-type layers, Appl. Phys. Lett., 2002, vol. 81, pp. 1258–1260.
Ashurov, Kh.B., Maksimov, S.E., Oksengender, B.L., and Abdurakhmanov, B.M., Nanoelectricity and thermodynamics of inconvertible processes, Appl. Solar Energy, 2013, vol. 49, no. 2, pp. 70–72.
Mikio Taguchi, Akira Terekawa, and Eiji Maruyama, Obtaining a higher Voc in HIT cells, Prog. Photovolt: Res. Appl., 2005, vol. 13, pp. 481–488.
Taguchi, M., et al., 24.7% record efficiency hit solar cell on thin silicon wafer, IEEE J. Photovolt., 2014, vol. 4, pp. 96–99. doi: 10.1109/jphotov.2013.2282737
Strunin, V.I., Lyakhov, A.A., Khudaibergenov, G.Zh., and Shkurkin, V.V., Numerical simulation of silane decomposition in an RF plasma, Tech. Phys., 2002, vol. 47, no. 6, pp. 760–766.
Ashurov, Kh., et al., JPN Patent JP2015535802a, Dec. 17, 2015.
Ashurov, Kh., et al., US Patent US2015251916, Sept. 10, 2015.
Ashurov, Kh., et al., Patent KR101532142, June 26, 2015.
Jurbergs, D., et al., Silicon nanocrystals with ensemble quantum yields exceeding 60%, Appl. Phys. Lett., 2006, vol. 88, p. 233116.
Kachurin, G.A., Volodin, V.A., Tetel’baum, D.I., et al., Semiconductors, 2005, vol. 39, no. 5, pp. 552–556.
Faraci, G., et al., Modified Raman confinement model for Si nanocristals, Phys. Rev. B, 2006, vol. 73, p. 033307.
Meier, C., et al., Raman properties of silicon nanoparticles, Phis. E, 2006, vol. 32, pp. 155–158.
Mishra, P. and Jain, K.P., Raman photoluminescence and optical absorption studies on nanocrystalline silicon, Mater. Sci. Eng. Eng. B, 2002, vol. 95, pp. 202–213.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © R.Kh. Ashurov, T.K. Turdaliev, I.Kh. Ashurov, V.M. Rotshteyn, 2017, published in Geliotekhnika, 2017, No. 4, pp. 56–60.
The article was translated by the authors.
About this article
Cite this article
Ashurov, R.K., Turdaliev, T.K., Ashurov, I.K. et al. Сrystallinity and size control of silicon nanoparticles synthesized from monosilane in glow-discharge plasma. Appl. Sol. Energy 53, 334–337 (2017). https://doi.org/10.3103/S0003701X17040028
Received:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S0003701X17040028