Abstract
The effect of laser radiation with a wavelength of 970 nm and a power density of 0.29–2.10 W/cm2 on the process of atomic layer deposition of alumina films from precursors (trimethylaluminium + water vapor) is studied. Laser irradiation is performed at the stages of reactor purging after the introduction of precursors. The results of a comprehensive analysis involving spectral ellipsometry, atomic force microscopy, X-ray diffractometry, and secondary-ion mass spectrometry have revealed that laser irradiation (i) does not alter the rate of deposition of alumina films onto silicon slices; (ii) does not alter the surface relief (roughness) of alumina films; (iii) does not alter the depth profile of the chemical composition of alumina films; (iv) reduces the average density of irradiated regions of alumina films by 5–10% relative to the density of nonirradiated regions.
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ACKNOWLEDGMENTS
The structure and the composition of films were studied at the common use center “Microsystems Technology and Electronic Component Base” of the National Research University of Electronic Technology supported by the Ministry of Education and Science of Russia (contract no. 14.594.21.0012, unique identifier RFMEFI59417X0012).
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Dedkova, A.A., Dyuzhev, N.A., Kireev, V.Y. et al. Study of the Effect of Laser Radiation on the Parameters of Alumina Films Formed by Atomic Layer Deposition. Nanotechnol Russia 13, 502–507 (2018). https://doi.org/10.1134/S199507801805004X
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DOI: https://doi.org/10.1134/S199507801805004X