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Light-emitting transistor structures based on semiconducting polymers and inorganic nanoparticles

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Abstract

One of the new directions in organic electronics is the development of light-emitting organic field-effect transistors, which combine the light-emitting properties of organic light-emitting diodes and the switching properties of organic field-effect transistors. Optical and electronic properties of novel nanocomposite materials based on semiconducting polymers and inorganic nanoparticles and designed for applications in organic electronics devices were investigated. Light-emitting organic field-effect transistors with composite active layers based on the soluble semiconducting polymers PFO and MEH-PPV and ZnO nanoparticles and having asymmetric electrodes (Al and Au) that inject electrons into ZnO and holes into PFO and MEH-PPV were prepared and investigated. The data are interpreted in the context of the possibility of organic field-effect transistors based on PFO: ZnO and MEH-PPV: ZnO composite films to work in both the unipolar regime and the ambipolar regime. It is shown that the mobility of charge carriers in light-emitting organic field-effect transistors based on PFO: ZnO at 300 K reaches ∼0.02 for electrons and ∼0.03 cm2/(V s) for holes, increasing with an increase in the concentration of nanoparticles up to ∼2 cm2/(V s), a value that is comparable to the maximum mobility values for conducting polymers. Light-emitting organic field-effect transistors based on PFO: ZnO and MEH-PPV: ZnO emit light in the green and orange ranges of the optical spectrum, respectively, their electroluminescence intensities rising with an increase in either the negative bias or the positive bias at the source-drain and the gate as well as with an increase in the concentration of ZnO nanoparticles. The results indicate that light-emitting organic field-effect transistors based on soluble conjugated polymers and semiconducting ZnO nanoparticles are examples of multifunctional devices whose production technology is compatible with the modern ink-jet printing technology of organic electronics.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. N. Aleshin

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Original Russian Text © A.N. Aleshin, 2014, published in Vysokomolekulyarnye Soedineniya, Ser. C, 2014, Vol. 56, No. 1, pp. 49–61.

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Aleshin, A.N. Light-emitting transistor structures based on semiconducting polymers and inorganic nanoparticles. Polym. Sci. Ser. C 56, 47–58 (2014). https://doi.org/10.1134/S1811238214010019

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