Skip to main content
SpringerLink
Log in

Hole Formation in a Diamond Substrate of Hybrid-Monolithic Integral SHF Schemes

  • MICROWAVE ELECTRONICS
  • Published:
Journal of Communications Technology and Electronics Aims and scope Submit manuscript

Abstract—

In this paper, we study the technological process of separating a heteroplate from a polycrystalline diamond film (PDF-Si), separating a whole plate from sacrificial silicon. The hole formation in a diamond substrate from PDF via laser milling and plasma-chemical etching is studied. Plasma-chemical etching provided batch hole fabrication based on planar technology and precision lithography. The technological modes of hole etching through an aluminum mask via reactive ion etching with an inductively coupled plasma source (RIE-ICP) were optimized. The hole etching rate in the PDF was ~ 1.1 μm/min. A mathematical model of the technological process is developed. Etching is shown to occur mainly in oxygen. The technological process is adapted for the plasma-chemical etching setup “Plasma TM5”. The possibility of etching in a PDF holes 100 μm in diameter and more than 300 μm deep was studied. The etching rate was shown to depend on the hole depth and is nonlinear in nature, with etching of the hole walls and the aluminum mask.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.
Fig. 8.
Fig. 9.

Similar content being viewed by others

REFERENCES

  1. A. A. Borisov and A. N. Korolev, in History of Domestic Electronics (ID Stolichnaya Entsiklopediya, Moscow, 2012), Vol. 1, p. 311 [in Russian].

    Google Scholar 

  2. A. G. Mikhal’chenkov and A. M. Temnov, in Fryazino School of Electronics (Yanus-K, Moscow, 2012) [in Russian].

    Google Scholar 

  3. A. M. Temnov, K. V. Dudinov, A. M. Emel’yanov, et al., Elektron. Tekh., Ser. 1: Elektron. SVCh., No. 2, 4 (2015).

  4. A. M. Temnov, K. V. Dudinov, A. M. Emel’yanov, et al., Elektron. Tekh., Ser. 1: Elektron. SVCh., No. 2, 45 (2015).

  5. A. M. Temnov, K. V. Dudinov, A. M. Emel’yanov, et al., Elektron. Tekh., Ser. 1: Elektron. SVCh., No. 2, 54 (2017).

  6. V. G. Ral’chenko and A. P. Bol’shakov, Carbon Photonics (Nauka, Moscow, 2017) [in Russian].

    Google Scholar 

  7. V. S. Sedov, Synthesis of Thin Micro and Nano Crystal Diamond Films in the Microwave oven to Plasma, Cand. Sci. (Phys. Math.) Dissertation (IOF RAN, Moscow, 2013), p. 126.

  8. D. N. Sovyk, Plasmochemical Synthesis of Three-Dimensional Structures from Diamond by a Remark Method, Cand. Sci. (Phys. Math.) Dissertation (IOF RAN, Moscow, 2014), p. 111.

  9. A. V. Deryabkin, Elektron. i Elektrooborud. Transp., No. 4, 35 (2018).

  10. M. P. Dukhnovskii, A. K. Ratnikova, and I. A. Leont’ev, Elektron. Tekh., Ser. 1: Elektron. SVCh., No. 2, 41 (2008).

  11. A. V. Golovanov, V. S. Bormashov, and A. P. Volkov, Tr. MFTI 5 (1), 31 (2013).

    Google Scholar 

  12. A. M. Temnov, K. V. Dudinov, A. M. Emel’yanov, et al., Elektron. Tekh., Ser. 1: Elektron. SVCh., No. 2, 68 (2017).

Download references

Author information

Authors and Affiliations

  1. Shokin Research and Production Enterprise “Istok”, 141190, Fryazino, Russia

    A. M. Temnov

Authors
  1. A. M. Temnov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. M. Temnov.

Additional information

Translated by A. Ivanov

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Temnov, A.M. Hole Formation in a Diamond Substrate of Hybrid-Monolithic Integral SHF Schemes. J. Commun. Technol. Electron. 65, 179–187 (2020). https://doi.org/10.1134/S1064226920020187

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1064226920020187

Search

Navigation