Skip to main content
Log in

Modeling of a High-Frequency Microelectromechanical X-Band Switch for Space Applications

  • MICROWAVE ELECTRONICS
  • Published:
Journal of Communications Technology and Electronics Aims and scope Submit manuscript

Abstract

The results of modeling of microwave and mechanical characteristics of an X-band switch based on the technology of high-frequency microelectromechanical structures are presented. A method for design of a device operating directly in the external environment and a device whose moving components are placed in a dielectric case. Characteristics of the optimized switches are determined. Estimated mechanical calculations confirming high stability of the developed high-frequency microelectromechanical structure switches in the temperature range specific of devices used in the space industry are also performed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.
Fig. 8.
Fig. 9.
Fig. 10.
Fig. 11.
Fig. 12.
Fig. 13.

Similar content being viewed by others

REFERENCES

  1. A. G. Nair and E. S. Shajahan, Procedia Computer Sci. 93, 217 (2016).

    Article  Google Scholar 

  2. Ai-Qun Liu, RF MEMS Switches and Integrated Switching Circuits. Design, Fabrication and Test (Springer-Verlag, New York, 2010).

    Book  Google Scholar 

  3. G. M. Rebeiz, RF MEMS Theory, Design and Technology (Wiley-Interscience, New Jersey, 2003).

    Google Scholar 

  4. E. A. Savin, K. A. Chadin, and R. V. Kirtaev, Microsystem Technol. 24, 2783–2788 (2018).

    Article  Google Scholar 

  5. N. P. Sobenin and O. S. Milovanov, Equipment of Ultrahigh Frequencies (Energoatomizdat, Moscow, 2007).

    Google Scholar 

  6. D. M. Pozar, Microwave Engineering (Wiley, New York, 2012).

    Google Scholar 

  7. J. Iannacci, Practical Guide to RF-MEMS (Wiley, New York, 2013).

    Book  Google Scholar 

  8. K. Iniewski, Radiation Effects in Semicunductors (CRC, Florida, 2010).

    Book  Google Scholar 

  9. R. H. Shea, Proc. SPIE 7928 (2011).

Download references

ACKNOWLEDGMENTS

This work was supported by the Ministry of Education and Science of the Russian Federation under Federal Targeted Program “Research and Development in Priority Areas of Development of the Scientific and Technological Complex of Russia for 2014–2020”, agreement no. 14.579.21.0137, unique identifier RFMEFI57916X0137.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to E. A. Savin.

Additional information

Translated by A. Ivanov

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Savin, E.A., Alagashev, G.K., Didyk, P.I. et al. Modeling of a High-Frequency Microelectromechanical X-Band Switch for Space Applications. J. Commun. Technol. Electron. 64, 52–58 (2019). https://doi.org/10.1134/S1064226919010108

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1064226919010108

Navigation