Abstract
The orientation of grains and the special boundaries formed by them in multicrystalline silicon has been studied by electron backscattered diffraction. It is found that the crystallographic parameters of special boundaries (misorientation angle and rotation axis) obtained using the Tango HKL Channel 5 software module may differ from the results of their direct computation by calculating the rotation matrix in the Spyder integrated development environment, using identical formulas based on Euler angles. In particular, special boundaries ∑3, ∑9, and ∑27a with misorientation angles of 180°, 120°, and 165°, respectively, are found in multicrystalline silicon. These versions of special grain boundaries are theoretically possible for the crystals of cubic system; however, they have not been investigated experimentally in multicrystalline silicon.
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This study was supported by a State contract (project no. IX.125.3.2).
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Translated by Yu. Sin’kov
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Chueshova, A.G., Pavlova, L.A., Peshcherova, S.M. et al. Crystallographic Parameters of Special Grain Boundaries in Multicrystalline Silicon. Crystallogr. Rep. 66, 1206–1215 (2021). https://doi.org/10.1134/S106377452107004X
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DOI: https://doi.org/10.1134/S106377452107004X