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Textured Barium Hexaferrite Films on Silicon Substrates with Aluminum Oxide and Titanium Oxide Barrier Layers

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Abstract

The possibility of synthesizing textured barium hexaferrite films on silicon wafers with Ti, Al2O3/Ti, or Al2O3/TiO2 barrier layers was studied. X-ray diffraction (XRD) showed that, after crystallization annealing, the hexaferrite phase with the (00l) preferred orientation was formed only when there was contact between BaFe12O19 and Al2O3. The hexaferrite microstructure in these samples, according to atomic force microscopy (AFM), is represented by rounded grains, which are typical of films where the hexagonal axis is perpendicular to the surface plane. Titanium in a BaFe12O19/Al2O3/Ti sample was partially oxidized during the synthesis. This process and the associated phase transformations in TiO2 are assumed to induce mechanical stress in the structure and, as a consequence, the formation of macroscopic defects (bulges). Complete pre-oxidation of the titanium film produced a textured BaFe12O19 structure without macroscopic defects.

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Authors and Affiliations

  1. National University of Science & Technology “MISiS”, 119049, Moscow, Russia

    V. G. Kostishin, A. Yu. Mironovich, A. V. Timofeev, R. I. Shakirzyanov & I. M. Isaev

  2. Moscow Plant “Sapfir”, 117545, Moscow, Russia

    A. V. Sorokin

  3. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 119991, Moscow, Russia

    A. I. Ril’

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  1. V. G. Kostishin
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Translated by O. Fedorova

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Kostishin, V.G., Mironovich, A.Y., Timofeev, A.V. et al. Textured Barium Hexaferrite Films on Silicon Substrates with Aluminum Oxide and Titanium Oxide Barrier Layers. Russ. J. Inorg. Chem. 66, 1802–1810 (2021). https://doi.org/10.1134/S0036023621120093

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