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Investigation of Power Transistor Parameters for Designing High-Frequency High-Voltage Nanosecond Switches

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Abstract

The efficiency of power transistors in composite high-voltage switches is analyzed. A high-voltage pulse generator capable of generating a periodic voltage signal with a rectangular shape, an amplitude as high as 16 kV, a current greater than 40 A, and a repetition rate of up to 100 kHz has been developed.

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REFERENCES

  1. Grekhov, I.V., Herald Russ. Acad. Sci., 2008, vol. 78, no. 1, p. 22.

    Article  Google Scholar 

  2. Kolikov, V.A., Kurochkin, V.E., Panina, L.K., Rutberg, A.F., Rutberg, F.G., Snetov, V.N., and Stogov, A.Y., Tech. Phys., 2007, vol. 52, no. 2, p. 263.

    Article  Google Scholar 

  3. Hackam, R. and Akiyama, H., IEEE Trans. Dielectr. Electr. Insul., 2000, vol. 7, no. 5, p. 654. doi 10.1109/ 94.879361

    Article  Google Scholar 

  4. Anders, A., Handbook of Plasma Immersion Ion Implantation and Deposition: Pulser Technology, New York: Wiley, 2000, pp. 501–511. http://www6.cityu.edu.hk/ appkchu/Publications/2000/00.12.pdf.

    Google Scholar 

  5. Nebogatkin, S.V., Rebrov, I.E., Khomich, V.Y., and Yamshchikov, V.A., Plasma Phys. Rep., 2016, vol. 42, no. 1, p. 104. https://doi.org/10.1134/ S1063780X16010128

    Article  ADS  Google Scholar 

  6. Novickij, V., Ruzgys, P., Grainys, A., and Satkauskas, S., Bioelectrochemistry, 2018, no. 119, p. 92. https://doi. org/10.1016/j.bioelechem.2017.09.006

  7. Moshkunov, S.I., Rebrov, I.E., and Khomich, V.Yu., Usp. Prikl. Fiz., 2013, vol. 1, no. 5, p. 630.

    Google Scholar 

  8. Khomich, V.Y., Malashin, M.V., Moshkunov, S.I., Rebrov, I.E., and Shershunova, E.A., EPE J., 2013, vol. 23, no. 4, p. 51. https://doi.org/10.1080/09398368. 2013.11463867

    Article  Google Scholar 

  9. Blake, C. and Bull, C., Igbt or Mosfet: Choose Wisely, International Rectifier, Application Note, 2001. http: //application-notes.digchip.com/014/14-15474.pdf.

  10. Ryu, S.H., Capell, C., Jonas, C., Cheng, L., O’Loughlin, M., Burk, A., and Hefner, A., Proc. 24th IEEE Int. Symposium on Power Semiconductor Devices and ICs (ISPSD), Bruges, 2012, p. 257. doi 10.1109/ISPSD. 2012.6229072

  11. Das, M.K., Bodo’s Power Syst. R, 2013, no. 22, p. 22.

  12. Voronin, P.A., Silovye poluprovodnikovye klyuchi: semeistva, kharakteristiki, primenenie (Power Semiconductor Switches: Families, Characteristics, Application), Moscow: Dodeka-XXI, 2001.

  13. Ammous, K., More, H., and Ammous, A., IEEE Trans. Instrum. Meas., 2010, vol. 59, no. 12, p. 3218. doi 10.1109/TIM.2010.2047302

    Article  Google Scholar 

  14. Shershunova, E., Malashin, M., Moshkunov, S., and Khomich, V., Acta Polytech., 2015, vol. 55, no. 1, p. 59. https://dspace.cvut.cz/handle/10467/67175.

    Article  Google Scholar 

  15. Khomich, V.Y., Malashin, M.V., and Moshkunov, S.I., Proc. IEEE Int. Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), Anacapri, 2016, p. 968. doi 10.1109/SPEEDAM.2016. 7525946

  16. Forsythe, J.B., Paralleling of Power MOSFETs for Higher Power Output, 1981. http://citeseerx.ist.psu. edu/viewdoc/summary?doi=10.1.1.305.913.

  17. Area, S.O., Application Characterization of IGBTs, International Rectifier, INT990. http://chtechnology.thomaswebs.net/pdf/AN-990%20Application% 20Characterization%20of%20IGBT's.pdf.

  18. International Rectifier “Insulated Gate Bipolar Transistor IRGPS40B120U” Data Sheet, PD-94295B. http: //www.irf.ru/pdf/irgps40b120u.pdf.

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Correspondence to I. E. Rebrov.

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Translated by N. Goryacheva

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Moshkunov, S.I., Rebrov, I.E., Khomich, V.Y. et al. Investigation of Power Transistor Parameters for Designing High-Frequency High-Voltage Nanosecond Switches. Instrum Exp Tech 61, 821–826 (2018). https://doi.org/10.1134/S0020441218050214

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  • DOI: https://doi.org/10.1134/S0020441218050214

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