Abstract
A process has been proposed for producing a plane-parallel ferromagnetic/ferroelectric interface, which ensures a reproducible magnetoelectric performance of Ni/PbZr0.2Ti0.8O3 (PZT) heterostructures. Its principle is to smooth the initial surface profile of the PZT ceramic substrate to a submicron level by sequential deposition/sputtering of three layers 0.2, 0.1, and 0.05 μm in thickness through ion beam sputtering of a target having the same composition as the substrate, followed by the growth of a nickel film on the smoothed surface. This allows one to preclude film bulging and spalling and ensures high quality of the interface.
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Original Russian Text © A.I. Stognij, N.N. Novitskii, S.A. Sharko, A.V. Bespalov, O.L. Golikova, V.A. Ketsko, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 8, pp. 947–951.
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Stognij, A.I., Novitskii, N.N., Sharko, S.A. et al. Fabrication of a plane-parallel interface in Ni/PbZr0.2Ti0.8O3 heterostructures. Inorg Mater 48, 832–835 (2012). https://doi.org/10.1134/S0020168512080146
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DOI: https://doi.org/10.1134/S0020168512080146