Abstract
A detailed study of the effect of p-doping of the active region on characteristics of long-wavelength InAs/GaAs QD lasers is performed. As the doping level increases, the characteristic temperature rises and the range of temperature stability for the threshold current density is broadened. In a laser doped with 2 × 1012 cm−2 acceptors per QD sheet, the characteristic temperature of 1200 K is obtained in the temperature range 15–75°C and the differential quantum efficiency is stable in the range 15–65°C. A maximum CW output power of 4.4 W is reached in an optimized structure.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 4, 2005, pp. 502–506.
Original Russian Text Copyright © 2005 by Novikov, Gordeev, Karachinski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Maksimov, Shernyakov, Kovsh, Krestnikov, Kozhukhov, Mikhrin, Ledentsov.
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Novikov, I.I., Gordeev, N.Y., Karachinskii, L.Y. et al. Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers. Semiconductors 39, 477–480 (2005). https://doi.org/10.1134/1.1900266
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DOI: https://doi.org/10.1134/1.1900266