Abstract
Structural and optical properties of InAs quantum dots (QDs) deposited on the surface of a thick InGaAs metamorphic layer grown on a GaAs substrate have been studied. The density and lateral size of QDs are shown to increase in comparison with the case of QDs grown directly on a GaAs substrate. The rise of In content in the InGaAs layer results in the red shift of the photoluminescence (PL) line, so that with 30 at % indium in the metamorphic layer the PL peak lies at 1.55 µm. The PL excitation spectroscopy of the electronic spectrum of QDs has shown that the energy separation between the sublevels of carriers in QDs decreases as the In content in the InGaAs matrix increases.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 7, 2004, pp. 867–871.
Original Russian Text Copyright © 2004 by Kryzhanovskaya, Gladyschev, Blokhin, Musikhin, Zhukov, Maksimov, Zakharov, Tsatsul’nikov, Ledentsov, Werner, Guffart, Bimberg.
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Kryzhanovskaya, N.V., Gladyschev, A.G., Blokhin, S.A. et al. Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−x As matrix on a GaAs substrate. Semiconductors 38, 833–836 (2004). https://doi.org/10.1134/1.1777610
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DOI: https://doi.org/10.1134/1.1777610