Abstract
High-resolution X-ray and synchrotron (crystal truncation rods) diffraction methods and transmission electron microscopy have been employed to study MBE-grown multilayer In(Ga)As-GaAs heterostructures with arrays of vertically coupled In(Ga)As quantum dots (QDs) in a GaAs matrix. Additional (vertical and lateral) spatial ordering of QDs in perfect crystalline structures, giving rise to undulations of the crystalline planes and quasi-periodic elastic strain, was shown to be essentially anisotropic with respect to crystallographic directions of the [110] type. The anisotropy of the QD formational system of can be accounted for by assuming that the spatial ordering of the QDs and the corrugation of the crystal planes are the initial stages of relaxation of the elastic strain introduced into the system by the QDs. The anisotropic relief of the crystal planes (corrugated growth surface) results from the formation of a system of spatially ordered quantum quasi-wires uniformly filled with QDs. In a multilayer heterostructure with high crystal perfection, the anisotropic relief of the crystal planes is inherited by overlying layers and its amplitude decreases gradually with increasing distance from the source of elastic strain—the superstructure containing In(Ga)As QDs in the given case.
Similar content being viewed by others
References
Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
L. Goldstein, F. Glas, J. Y. Marzin, et al., Appl. Phys. Lett. 47, 1099 (1985).
Y. Arakawa and A. Yariv, IEEE J. Quantum Electron. QE-22, 1887 (1986).
M. Asada, Y. Miyamoto, and Y. Suematsu, IEEE J. Quantum Electron. QE-22, 1915 (1986).
Semiconductors and Semimetals, Vol. 40: Epitaxial Microstructures, Ed. by A. C. Gossard (Academic, Boston, 1994).
Nanostructures and Quantum Effects, Ed. by H. Sakaki and H. Noge (Springer-Verlag, Berlin, 1994).
N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 385 (1998) [Semiconductors 32, 343 (1998)].
S. V. Zaitsev, N. Yu. Gordeev, Yu. M. Sherniakov, et al., in Proceedings of the 9th International Conference on Superlattices, Microstructures and Microdevices, Liege, 1996; A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 483 (1997) [Semiconductors 31, 411 (1997)].
V. Holy, A. A. Darhuber, G. Bauer, et al., Phys. Rev. B 52, 8348 (1995).
A. A. Darhuber, E. Koppensteiner, H. Straub, et al., J. Appl. Phys. 76, 7816 (1994).
A. A. Darhuber, V. Holy, J. Stangl, et al., Appl. Phys. Lett. 70, 955 (1997).
A. A. Darhuber, P. Schittenhelm, V. Holy, et al., Phys. Rev. B 55, 15652 (1997).
N. Faleev, K. Pavlov, M. Tabuchi, and Y. Takeda, Jpn. J. Appl. Phys. 38, 818 (1999).
N. Faleev, K. Pavlov, M. Tabuchi, and Y. Takeda, Jpn. J. Appl. Phys., Suppl. 38, 277 (1999).
K. Pavlov, N. Faleev, M. Tabuchi, and Y. Takeda, Jpn. J. Appl. Phys., Suppl. 38, 269 (1999).
N. N. Faleev, K. M. Pavlov, V. I. Punegov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1359 (1999) [Semiconductors 33, 1229 (1999)].
S. Rouvimov, Z. Liliental-Weber, W. Swider, et al., J. Electron. Mater. 27, 427 (1998).
A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, et al., J. Cryst. Growth 201/202, 1117 (1999).
J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996); C. Teichert, M. G. Lagally, L. J. Peticolas, et al., Phys. Rev. B 53, 16334 (1996).
I. P. Ipatova, V. G. Malyshkin, and V. A. Shchukin, J. Appl. Phys. 74, 7198 (1993).
V. A. Shchukin, A. I. Borovkov, N. N. Ledentsov, and P. S. Kop’ev, Phys. Rev. B 51, 17767 (1995).
E. Carlino, L. Tapfer, and H. von Kanel, Appl. Phys. Lett. 69, 2546 (1996).
K. Shiramine, Y. Horisaki, D. Suzuki, et al., Jpn. J. Appl. Phys. 37, 5493 (1998).
V. G. Gruzdov, A. O. Kosogov, and N. N. Faleev, Pis’ma Zh. Tekh. Fiz. 20(14), 1 (1994) [Tech. Phys. Lett. 20, 561 (1994)].
A. Ponchet, A. Rocher, A. Ougazzaden, and A. Mircea, J. Appl. Phys. 75, 7881 (1994); A. Ponchet, A. Le Corre, A. Godefroy, et al., J. Cryst. Growth 153, 71 (1995).
R. L. Headrick, J.-M. Baribeau, and Y. E. Strausser, Appl. Phys. Lett. 66, 96 (1995).
T. Shimura and J. Harada, J. Appl. Crystallogr. 26, 151 (1993).
N. Faleev, L. Grave de Peralta, H. Temkin, and V. M. Ustinov, in Abstracts of the X-TOP 2000, Warsaw, 2000}, S4.3
N. Faleev, T. Kawamura, Y. Watanabe, and V. Ustinov, in Abstracts of the X-TOP 2000, Warsaw, 2000}, P2-HG139
L. Dong, J. Schnitker, R. W. Smith, and D. J. Srolovitz, J. Appl. Phys. 83, 217 (1998).
N. Faleev, R. Stabenow, M. Sinitsyn, et al., Mater. Sci. Forum 166–169, 293 (1994).
A. Ponchet, A. Rocher, J.-Y. Emery, et al., J. Appl. Phys. 77, 1977 (1995).
Z. H. Ming, Y. L. Soo, S. Huang, et al., Appl. Phys. Lett. 66, 165 (1995).
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 8, 2001, pp. 969–978.
Original Russian Text Copyright © 2001 by Faleev, Musikhin, Suvorova, Egorov, Zhukov, Kovsh, Ustinov, Tabuchi, Takeda.
Rights and permissions
About this article
Cite this article
Faleev, N.N., Musikhin, Y.G., Suvorova, A.A. et al. Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopy. Semiconductors 35, 932–940 (2001). https://doi.org/10.1134/1.1393030
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1393030