Abstract
The mechanism for heteroepitaxial growth in the InAs/Si system is studied by reflection highenergy electron diffraction, scanning tunnelling microscopy, and photoluminescence. For certain growth conditions, InAs nanostructures are found to develop on the Si surface immediately during the growth process in the course of molecular beam epitaxy. The range of substrate temperatures that lead to formation of nanosized islands is determined. InAs quantum dots grown on a buffer Si layer with a silicon layer of thickness 50 nm grown on the top produced photoluminescence lines at a wavelength of 1.3 µm at 77K and 1.6 µm at 300 K.
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Fiz. Tekh. Poluprovodn. 33, 1066–1069 (September 1999)
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Cyrlin, G.E., Petrov, V.N., Dubrovskii, V.G. et al. Heteroepitaxial growth of InAs on Si: A new type of quantum dot. Semiconductors 33, 972–975 (1999). https://doi.org/10.1134/1.1187815
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DOI: https://doi.org/10.1134/1.1187815