Abstract
In this paper the physical mechanisms and fundamental methods of obtaining nanometer-size atomic clusters in semiconductors are discussed, along with the possibility of controlling the properties of these clusters and those of the resulting cluster-containing materials. A number of electronic properties of semiconductors containing nanometer-sized clusters are considered, along with potential uses of these materials in electronics.
Similar content being viewed by others
References
M. G. Mil’vidskii and V. B. Osvenskii, Structural Defects in Single-Crystal Semiconductors (Metallurgiya, Moscow, 1984) [in Russian].
V. V. Emtsev and T. V. Mashovets, Impurities and Point Defects in Semiconductors (Radio i Svyaz, Moscow, 1981) [in Russian].
M. G. Mil’vidskii, N. S. Rytova, and E. V. Solov’eva, in Problems in Crystallography (Nauka, Moscow, 1987), V. 3, p. 215 [in Russian].
Rare Earth Doped Semiconductors, MRS Symposium Proc. V. 301, edited by G. S. Pomrenke, P. B. Klein, and D. W. Lander (Pittsburg, USA, 1993).
V. I. Fistul’, Heavily Doped Semiconductors (Nauka, Moscow, 1965) [in Russian].
V. V. Voronkov, Semicond. Sci. Technol. 8, 2037 (1993).
F. W. Smith, A. R. Calawa, C. L. Chen, M. J. Mantra, and L. J. Mahoney, Electron. Dev. Lett. 9, 77 (1988).
N. A. Bert and V. V. Chaldyshev, Fiz. Tekh. Poluprovodn. 30, 1889 (1996) [Semiconductors 30, 988 (1996)].
N. A. Bert, V. V. Chaldyshev, D. I. Lubyshev, and V. V. Preobrazhenskii, Fiz. Tekh. Poluprovodn. 29, 2232 (1995) [Semiconductors 29, 1170 (1995)].
I. M. Lifshitz and V. V. Slezov, Zh. Éksp. Teor. Fiz. 35, 479 (1958) [Sov. Phys. JETP 8, 331 (1959)].
V. V. Voronkov and M. G. Mil’vidskii, Kristallografiya 33, 471 (1988) [Sov. Phys. Crystallogr. 33, 278 (1988)].
E. V. Solov’eva, M. G. Mil’vidskii, A. I. Belogorokhov, G. I. Vinogradova, D. T. Gogoladze, L. M. Dolginov, N. V. Mal’kova, V. M. Novikova, and A. N. Osipova, Fiz. Tverd. Tela (Leningrad) 25, 965 (1991) [Sov. Phys. Solid State 25, 551 (1991)].
A. A. Chernov, Contemporary Crystallography (Nauka, Moscow, 1980), V. 3, p. 7 [in Russian].
Zh. I. Alferov, Physica Scripta 68, 32 (1996).
M. L. Cohen and W. Knight, Phys. Today No. 12, 43 (1990).
C. T. Dameron, R. N. Reese, R. K. Mehra, A. R. Korton, P. J. Carrol, M. L. Steigerwald, L. E. Brus, and D. R. Winge, Nature 338, 596 (1989).
L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
Porous Silicon. Science and Technology, edited by J.-C. Vial and J. Derrier (Springer-Verlag, Berlin, 1995).
E. Edelberg, S. Bergh, R. Naone, M. Hall, and E. S. Aydil, Appl. Phys. Lett. 68, 1415 (1996).
A. C. Warren, J. M. Woodall, J. L. Freeouf, D. Grischkowski, D. T. McInturff, M. R. Melloch, N. Otsuka, Appl. Phys. Lett. 57, 1331 (1990).
V. G. Golubev, V. Yu. Davydov, A. V. Medvedev, A. B. Pevtsov, and N. A. Feoktistov, Fiz. Tverd. Tela (St. Petersburg) 39, 1348 (1997) [Phys. Solid State 39, 1197 (1997)].
M. Grudmann, J. Christen, N. N. Ledentsov, J. Bohrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gosele, J. Heidenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, and Zh. I. Alferov, Phys. Rev. Lett. 74, 4043 (1995).
Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
Zh. I. Alferov, N. A. Bert, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, A. O. Kosogov, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, A. V. Sakharov, V. M. Ustinov, A. F. Tsatsul’nikov, Yu. M. Shernyakov, and D. Bimberg, Fiz. Tekh. Poluprovodn. 30, 351 (1996) [Semiconductors 30, 194 (1996)].
L. Guo, E. Leobandung, and S. Y. Chou, Appl. Phys. Lett. 70, 850 (1997).
Author information
Authors and Affiliations
Additional information
Fiz. Tekh. Poluprovodn. 32, 513–522 (May 1998)
Rights and permissions
About this article
Cite this article
Mil’vidskii, M.G., Chaldyshev, V.V. Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties. Semiconductors 32, 457–465 (1998). https://doi.org/10.1134/1.1187418
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1187418