Abstract
We have studied the pyrolysis of trimethylaluminum (TMA) in a nitrogen-containing atmosphere of a vapor phase epitaxy reactor. It is established that, in the presence of gallium nitride coatings in the reactor, the main product of TMA pyrolysis in a nitrogen-hydrogen atmosphere is aluminum nitride. Using this process (without introducing ammonia), we obtained perfect epitaxial aluminum nitride layers.
Article PDF
Similar content being viewed by others
References
W. V. Lundin, E. E. Zavarin, and D. S. Sizov, Pis’ma Zh. Tekh. Fiz. 31(7), 52 (2005) [Tech. Phys. Lett. 31, 293 (2005)].
E. E. Zavarin, D. S. Sizov, W. V. Lundin, et al., Proc. Electrochem. Soc. 9, 299 (2005).
W. V. Lundin, R. A. Talalaev, E. E. Zavarin, et al., Proceedings of the 11th European Workshop on Metalorganic Vapor Phase Epitaxy (Lausanne, Switzerland, June 5–8, 2005), Book of Extended Abstracts, pp. 331–333.
N. L. Glinka, General Chemistry (Khimiya, Leningrad, 1983).
O. Ambacher, J. Phys. D: Appl. Phys. 31, 2653 (1998).
M. Bockowski, Cryst. Res. Technol. 36, 771 (2001).
M. Bickermann, B. M. Epelbaum, and A. Winnacker, J. Crystal Growth 269, 432 (2004).
L. J. Schowalter, J. C. Rojo, N. Yakolev, et al., MRS Internet J. Nitride Semicond. Res. 5S1, W.6.7 (2000).
A. Nikolaev, I. Nikitina, A. Zubrilov, et al., MRS Internet J. Nitride Semicond. Res. 5S1, W6.5 (2000).
E. E. Zavarin, A. V. Sakharov, W. V. Lundin, et al., Abstracts of the 2nd All-Russia Conf. “Gallium, Indium, and Aluminum Nitrides: Structures and Devices” (St. Petersburg, February 3–4, 2003), pp. 91–92.
G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice (Academic Press, New York, 1989, 1999).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, M.A. Yagovkina, A.F. Tsatsul’nikov, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 21, pp. 7–14.
Rights and permissions
About this article
Cite this article
Lundin, W.V., Zavarin, E.E., Sinitsyn, M.A. et al. Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen. Tech. Phys. Lett. 34, 908–911 (2008). https://doi.org/10.1134/S1063785008110023
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785008110023