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Effect of inelastic and elastic energy losses of Xe ions on the evolution of hydrogen blisters in silicon

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Abstract

We analyze the effect of irradiation by heavy ions on the formation of blisters on the silicon surface preliminarily ion-doped with hydrogen. An attempt is made at differentiating inelastic and elastic processes of interaction between ions and Si atoms using bombardment of the sample with high-energy charged particles through a bent absorbing filter by varying the radiation doses and the energy of bombarding Xe ions. It is found that irrespective of specific ionization energy losses of heavy ions, the blister formation is completely suppressed in the zone of the inelastic interaction during postradiation annealing. Conversely, stimulated development of hydrogen porosity takes place at the same time in the zone of elastic interaction, which is manifested in the form of blisters and flaking.

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Authors and Affiliations

  1. Joint Institute for Nuclear Research, Dubna, Moscow oblast, 141980, Russia

    V. F. Reutov, S. N. Dmitriev & A. S. Sokhatskii

  2. National Research Nuclear University MEPhI, Kashirskoe sh. 31, Moscow, 115409, Russia

    A. G. Zaluzhnyi

Authors
  1. V. F. Reutov
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  2. S. N. Dmitriev
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  3. A. S. Sokhatskii
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  4. A. G. Zaluzhnyi
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Corresponding author

Correspondence to V. F. Reutov.

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Original Russian Text © V.F. Reutov, S.N. Dmitriev, A.S. Sokhatskii, A.G. Zaluzhnyi, 2016, published in Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 61, No. 1, pp. 32–36.

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Reutov, V.F., Dmitriev, S.N., Sokhatskii, A.S. et al. Effect of inelastic and elastic energy losses of Xe ions on the evolution of hydrogen blisters in silicon. Tech. Phys. 61, 28–32 (2016). https://doi.org/10.1134/S1063784216010163

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  • DOI: https://doi.org/10.1134/S1063784216010163

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