Abstract
This paper describes simulation of theoperation of integrated high-speed \(pn\)photodiodes and verification of the results bymeans of measurements performed with two typesof photodiode, one implemented in a standard 0.8μm CMOS process and the other in a standard1.2 μm BiCMOS process. The measured rise timesand responsivities of the photodiodes were <5ns and 0.28 A/W in the CMOS process and 30 ns and0.31 A/W in the BiCMOS process. Furthermore, thesuitability of the photodiode for 3D vision wasinvestigated by designing an array ofphotodetectors and measuring the isolationbetween the detector blocks. The results confirmthat the photodetectors and receiver for a pulsedlaser rangefinder can be implemented on the samechip in a standard process without any processmodifications.
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Palojärvi, P., Ruotsalainen, T. & Kostamovaara, J. Pn Photodiodes for Pulsed Laser Rangefinding Applications Realized in Standard CMOS/BiCMOS Processes. Analog Integrated Circuits and Signal Processing 27, 239–248 (2001). https://doi.org/10.1023/A:1011293505867
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DOI: https://doi.org/10.1023/A:1011293505867