Abstract
The results of computational modelling of the reflection coefficient from the semiconductor surface under conditions of spin-magnetoplasma wave excitation on its surface with the simultaneous changing the concentration and the mobility of charge carriers as well as the relaxation time of magnetic subsystem are presented. The experiments were carried out on the unique automated measuring set-up with the attenuated total reflection technique. An accuracy of the temperature stabilization amounts to 0.1К in the temperature range T=4.2-300 К. For the first time the surface spin-magnetoplasma waves were excited in the solid solutions of diluted magnetic semiconductors of Cd 1-x Mn x Te and Hg 1-x-y Cd x Mn y Te types. The experimental results are in good agreement with numerical ones that allowed us to determine both the electron subsystem parameters on the semiconductor surface and the function describing their temperature law.
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Bondarev, A., Gorbatyuk, I., Ivanchenko, I. et al. Computational Modelling and Experimental Investigation of Spin-Magnetoplasma Waves. International Journal of Infrared and Millimeter Waves 25, 617–631 (2004). https://doi.org/10.1023/B:IJIM.0000020750.17411.b7
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DOI: https://doi.org/10.1023/B:IJIM.0000020750.17411.b7