Abstract
Superconducting MgB2 thin films have been fabricated on originally prepared boride substrates (AlB2 (0001), ZrB2 (random orientation), CaB6 (0001), Al2O3 (0001)) by pulsed laser deposition (PLD) at room temperature, followed by in-situ annealing process. The highest T c of 30 K, transition width of 6 K was obtained for Al2O3 (0001). T c s were lowered and no zero resistivity was observed for boride substrates.
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Hikita, Y., Fukumura, T., Ito, T. et al. Fabrication of MgB2 Thin Film on Boride Substrates by Pulsed Laser Deposition. Journal of Low Temperature Physics 131, 1187–1191 (2003). https://doi.org/10.1023/A:1023481900617
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DOI: https://doi.org/10.1023/A:1023481900617