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Integration of Subcells in III-V//Si Tandem Solar Cells

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Abstract

Tandem solar cells with four and two terminals fabricated with III -V on Si have achieved 35.9% conversion efficiency, which goes beyond the S-Q limit of single junction silicon solar cells. Compared to perovskite tandem solar cells, III-V//Si tandem solar cells have proven their high stability and reliability, which makes them potential candidates for commercialization in future for terrestrial applications. For the proper integration of III -V top and intermediate subcells with silicon bottom subcell, different approaches are being investigated globally. Mechanical bonding is an important approach that utilizes appropriate materials of high transmittance and conductance and hence it is being experimented globally except in the case of direct epitaxial growth of III -V materials on silicon. This review article presents a comprehensive description of different approaches adopted for the integration of subcells in tandem architecture.

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Acknowledgements

This research was funded and conducted under ┌the Competency Development Program for Industry Specialists┘ of the Korean Ministry of Trade, Industry and Energy(MOTIE), operated by Korea institute for Advancement of Technology (KIAT). (No. P0012453, Next generation Display Expert Training Project for Innovation Process and Equipment, Materials Engineers). This research was supported by grants from the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Korean Ministry of Trade, Industry and Energy (MOTIE) (Project No. 20218520010100).

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Authors and Affiliations

  1. Interdisciplinary Program in Photovoltaic System Engineering, Sungkyunkwan University, 16419, Suwon Gyeonggi-Do, Republic of Korea

    Seungyong Han & Matheus de Assis Rabelo

  2. College of Information and Communication Engineering, Sungkyunkwan University, 16419, Suwon Gyeonggi-Do, Republic of Korea

    Suresh Kumar Dhungel, Duy Phong Pham, Youngkuk Kim & Junsin Yi

  3. Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419, Suwon Gyeonggi-Do, Republic of Korea

    Somin Park

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  1. Seungyong Han
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Correspondence to Junsin Yi.

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Han, S., Dhungel, S.K., Park, S. et al. Integration of Subcells in III-V//Si Tandem Solar Cells. Trans. Electr. Electron. Mater. 24, 132–139 (2023). https://doi.org/10.1007/s42341-023-00430-2

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