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Design, Simulation and Analysis of a Slotted RF MEMS Switch

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Abstract

In this paper, a capacitive RF MEMS switch working in shunt configuration is designed and optimized using FEM software. An electrostatically actuated fixed–fixed type shunt switch is optimised for low pull-in voltage. The thickness of the membrane and the actuating gap is optimized for low pull-in voltage and high capacitance ratio. The effect of different meanders, perforations, slits and device dimensions were also analyzed. The final device has a pull-in voltage of 3.74 V, down capacitance of 28.6 pF, up capacitance of 160 fF and a capacitance ratio of 178.125. The switch shows peak isolation of 43.3 dB at 39.7 GHz and isolation better than 30 dB over the entire Ka band.

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Acknowledgements

The authors would like to thank, National MEMS design center, NIT Silchar for providing necessary FEM tools.

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Authors and Affiliations

  1. Department of Physics, National Institute of Technology, Kurukshetra, Haryana, 136119, India

    Sai Pranav Chokkara & Anurag Gaur

  2. MEMS Research Center, Department of ECE, Koneru Lakshmaiah Education Foundation (Deemed to be University), Vaddeswaram, Guntur, Andhra Pradesh, 522502, India

    K. Girija Sravani, B. Balaji & K. Srinivasa Rao

  3. National MEMS Design Center, National Institute of Technology Silchar, Silchar, Assam, 788010, India

    K. Girija Sravani

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  1. Sai Pranav Chokkara
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Correspondence to K. Girija Sravani.

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Chokkara, S.P., Gaur, A., Sravani, K.G. et al. Design, Simulation and Analysis of a Slotted RF MEMS Switch. Trans. Electr. Electron. Mater. 23, 419–429 (2022). https://doi.org/10.1007/s42341-021-00363-8

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